SI4943BDY-T1-E3 Vishay

SI4943BDY-T1-E3 electronic component of Vishay
SI4943BDY-T1-E3 Vishay
SI4943BDY-T1-E3 MOSFETs
SI4943BDY-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4943BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4943BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4943BDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 8.4A 2W
Datasheet: SI4943BDY-T1-E3 Datasheet (PDF)
Price (USD)
1: USD 2.9625 ea
Line Total: USD 2.96 
Availability : 30753
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 2.9625
10$ 1.872
100$ 1.232
500$ 1.0329
1000$ 0.9581
2500$ 0.9581
5000$ 0.957
25000$ 0.9493

Availability 30753
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.9625
10$ 1.872
100$ 1.232
500$ 1.0329
1000$ 0.9581
2500$ 0.9581
5000$ 0.957
25000$ 0.9493

   
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RoHS - XON
Icon ROHS
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4943BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4943BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI4943BDY-T1-E3 is a small-signal MOSFET transistor from Vishay Semiconductor. The device features a 300 mA, 175 V drain-source breakdown voltage and a maximum drain current of 300 mA. It is a N-channel enhancement mode that is designed to operate under high temperature and low power requirements. The device has a package type of SOT-23, and its maximum drain-source on-state resistance is 20.5 Ohm. The device is ideal for low voltage and high speed applications, such as in power management, power supplies, and motor control applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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