Si5435BDC Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.045 at V = - 10 V - 5.9 GS TrenchFET Power MOSFETs - 30 0.080 at V = - 4.5 V - 4.4 GS 1206-8 ChipFET 1 D S D D D D Marking Code D G G BJ XXX S Lot Traceability and Date Code Part Code Bottom View D Ordering Information: Si5435BDC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si5435BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 5.9 - 4.3 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 4.3 - 3.1 A A I Pulsed Drain Current - 30 DM a I - 2.1 - 1.1 Continuous Source Current S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.3 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 80 95 C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73137 www.vishay.com S09-0129-Rev. B, 02-Feb-09 1Si5435BDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 85 C - 5 DS GS J a I V - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4.3 A 0.035 0.045 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.3 A 0.065 0.080 GS D a g V = - 15 V, I = - 4.3 A 14 S Forward Transconductance fs DS D a V I = - 1.1 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 16 24 g Q V = - 15 V, V = - 10 V, I = - 4.3 A Gate-Source Charge 2.7 nC gs DS GS D Gate-Drain Charge Q 4.1 gd R Gate Resistance f = 1 MHz 8.5 g Turn-On Delay Time t 815 d(on) t Rise Time V = - 15 V, R = 15 12 20 r DD L I - 1 A, V = - 10 V, R = 6 Turn-Off Delay Time t 32 50 ns D GEN g d(off) t Fall Time 20 30 f Source-Drain Reverse Recovery Time t I = - 1.1 A, dI/dt = 100 A/s 25 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 T = - 55 C V = 10 thru 6 V C GS 25 25 5 V 25 C 125 C 20 20 15 15 4 V 10 10 5 5 3 V 0 0 0 1234 5 0 123 456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73137 2 S09-0129-Rev. B, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D