X-On Electronics has gained recognition as a prominent supplier of SI5442DU-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5442DU-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5442DU-T1-GE3 Vishay

SI5442DU-T1-GE3 electronic component of Vishay
SI5442DU-T1-GE3 Vishay
SI5442DU-T1-GE3 MOSFETs
SI5442DU-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI5442DU-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V 10mOhm4.5V 25A N-Ch
Datasheet: SI5442DU-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1346: USD 0.1932 ea
Line Total: USD 260.05 
Availability - 2813
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ: 1346  Multiples: 1
Pack Size: 1
Availability Price Quantity
2813
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 1346
Multiples : 1
1346 : USD 0.1932
1388 : USD 0.1873
1389 : USD 0.1872
1455 : USD 0.1787
1469 : USD 0.177
1483 : USD 0.1754
1597 : USD 0.1629

97
Ship by Wed. 09 Jul to Mon. 14 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7088
10 : USD 0.5516
30 : USD 0.4854
100 : USD 0.2719
500 : USD 0.2457
1000 : USD 0.2308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Qg - Gate Charge
Channel Mode
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Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI5442DU-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5442DU-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI5442DU-T1-GE3 is an ultra-low on-resistance advanced MOSFET designed by Vishay Semiconductors. This part offers a maximum continuous drain-source voltage of 20V and a rated drain-source on-resistance of 10 mO. The MOSFET is capable of providing a maximum drain current of 25 A, making it ideal for applications which demand higher current loads like LEDs, motor drivers, high-power RF amplifiers and switching power supplies. The SI5442DU-T1-GE3 has a maximum gate threshold voltage of 4.5V, making it suitable for applications which have low voltage requirements. Additionally, this part has low gate-charge losses, allowing for high switching efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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