Si7113DN Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET e 0.134 at V = - 10 V - 13.2 Low Thermal Resistance PowerPAK GS RoHS - 100 16.5 nC Package with Small Size and Low 1.07 mm COMPLIANT e 0.145 at V = - 4.5V - 12.7 GS Profile UIS and R Tested g APPLICATIONS Active Clamp in Intermediate DC/DC Power Supplies PowerPAK 1212-8 S S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7113DN-T1-E3 (Lead (Pb)-free) Si7113DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 100 DS V Gate-Source Voltage V 20 GS e T = 25 C - 13.2 C e T = 70 C - 10.6 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 3.5 A a, b T = 70 C - 2.8 A A I - 20 Pulsed Drain Current DM e T = 25 C - 13.2 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3.0 A I 15 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.25 mJ AS 52 T = 25 C C 33 T = 70 C C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A b, c T = 70 C A 2.4 T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (Si7113DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 26 33 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditins is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 100 V DS GS D V Temperature Coefficient V /T - 100 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 5.0 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4 A 0.108 0.134 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 3 A 0.119 0.145 GS D a g V = - 15 V, I = 4 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1480 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS C Reverse Transfer Capacitance 60 rss V = - 50 V, V = - 10 V, I = - 4 A 35 55 DS GS D Q Total Gate Charge g 16.5 25 nC Q V = - 50 V, V = - 4.5 V, I = - 4 A Gate-Source Charge 4.7 gs DS GS D Q Gate-Drain Charge 8 gd R Gate Resistance f = 1 MHz 5.3 8 g t Turn-On Delay Time 30 45 d(on) t V = - 50 V, R = 12.5 Rise Time 110 165 r DD L t I - 4 A, V = - 4.5 V, R = 1 Turn-Off DelayTime D GEN g 51 80 d(off) t Fall Time 40 60 f ns t Turn-On Delay Time 11 18 d(on) t V = - 50 V, R = 12.5 Rise Time 13 20 r DD L t I - 4 A, V = - 10 V, R = 1 Turn-Off DelayTime D GEN g 42 65 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 13.2 S C A a I - 20 Pulse Diode Forward Current SM V I = - 3 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 46 70 ns rr Q Body Diode Reverse Recovery Charge 97 150 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 36 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73770 2 S-81544-Rev. C, 07-Jul-08