X-On Electronics has gained recognition as a prominent supplier of SI7113DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7113DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7113DN-T1-GE3 Vishay

SI7113DN-T1-GE3 electronic component of Vishay
SI7113DN-T1-GE3 Vishay
SI7113DN-T1-GE3 MOSFETs
SI7113DN-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI7113DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 13.2A 52W 134mohm @ 10V
Datasheet: SI7113DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7628 ea
Line Total: USD 1.76 
Availability - 12878
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12878
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 1
Multiples : 1
1 : USD 1.7628
10 : USD 1.4258
30 : USD 0.9429
100 : USD 0.6566
500 : USD 0.5894
1000 : USD 0.554

2486
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 2.142
10 : USD 1.778
16 : USD 1.232
43 : USD 1.162
1000 : USD 1.134

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7113DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7113DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI7113DN-T1-GE3 is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device. This device is able to withstand a maximum drain-source voltage of 100V and can handle a current of up to 13.2A. It has a power rating of 52W and has an average gate-source resistance of 134mohm when its associated voltage is 10V. This MOSFET can be used in a variety of applications such as DC/DC converters, lighting applications, power management systems, and industrial motor controls.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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