Si7960DP Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.021 at V = 10 V 9.7 GS TrenchFET Power MOSFET 60 New Low Thermal Resistance PowerPAK 0.025 at V = 4.5 V 8.9 GS Package Dual MOSFET for Space Savings PowerPAK SO-8 S1 6.15 mm 5.15 mm 1 D 1 D G1 2 2 S2 3 G2 4 D1 8 D1 7 G 1 G 2 D2 6 D2 5 Bottom View S 1 S 2 Ordering Information: Si7960DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si7960DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 9.7 6.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 7.8 5.0 A Pulsed Drain Current I 40 A DM a I 2.9 1.2 Continuous Source Current (Diode Conduction) S Single Avalanche Current L = 0.1 mH I 23 AS Single Avalanche Energy E 27 mJ AS T = 25 C 3.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 2.2 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 26 35 a R Maximum Junction-to-Ambient thJA Steady State 60 85 C/W Maximum Junction-to-Case (Drain) Steady State R 2.2 2.7 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73075 www.vishay.com S09-0223-Rev. B, 09-Feb-09 1Si7960DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A 1 3 V Gate Threshold Voltage GS(th) DS GS D I V = 0 V, V = 20 V 100 nA Gate-Body Leakage GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 9.7 A 0.017 0.021 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8.9 A 0.020 0.025 GS D a g V = 15 V, I = 9.7 A 33 S fs DS D Forward Transconductance a V I = 2.9 A, V = 0 V 0.8 1.2 V SD S GS Diode Forward Voltage b Dynamic Total Gate Charge Q 49 75 g Q V = 30 V, V = 10 V, I = 9.7 A 5.7 Gate-Source Charge nC gs DS GS D Gate-Drain Charge Q 8.6 gd R f = 1 MHz 2 Gate Resistance g Turn-On Delay Time t 12 20 d(on) t 12 20 Rise Time V = 30 V, R = 30 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 6090 ns D GEN G d(off) t 17 30 Fall Time f Source-Drain Reverse Recovery Time t I = 2.9 A, dI/dt = 100 A/s 30 60 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru 4 V GS 35 35 30 30 25 25 20 20 15 15 T = 125 C C 10 10 25 C 5 5 3V - 55 C 0 0 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 4.0 4 .5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73075 2 S09-0223-Rev. B, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D