Si7980DP Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a, f V R () Q (Typ.) DS I (A) DS(on) g D 100 % R and UIS Tested g 0.022 at V = 10 V 8 GS Material categorization: Channel-1 20 8 0.025 at V = 4.5 V 8 GS For definitions of compliance please see 0.015 at V = 10 V 8 GS www.vishay.com/doc 99912 Channel-2 20 17 0.019 at V = 4.5 V 8 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Synchronous Buck Converter V (V) SD a V (V) - Game Machines I (A) DS F Diode Forward Voltage - Notebook Computers 20 0.43 V at 1 A 4 D 1 PowerPAK SO-8 6.15 mm 5.15 mm 1 G 1 2 3 N-Channel 1 4 MOSFET S /D 1 2 D 1 D 1 8 7 S /D 1 2 Schottky Diode S /D 1 2 6 G 2 5 Bottom View N-Channel 2 MOSFET Ordering Information: S Si7980DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit Drain-Source Voltage V 20 20 DS V Gate-Source Voltage V 16 16 GS f f T = 25 C C 8 8 f f T = 70 C C 8 8 Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 8.8 11 b, c b, c T = 70 C A 7.1 9 Pulsed Drain Current I A 30 30 DM f f T = 25 C C 8 8 Source-Drain Current Diode Current I S b, c b, c T = 25 C A 2.8 2.8 I Pulsed Source-Drain Current 30 30 SM Single Pulse Avalanche Current I 15 15 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 11.2 11.2 AS T = 25 C 19.8 21.9 C T = 70 C 12.6 14 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 3.1 3.4 b, c b, c T = 70 C A 2 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Package limited. Document Number: 68391 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0631-Rev. D, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 S /D 1 2 G 1 S 2 G 2Si7980DP Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Typ. Max. Typ. Max. Parameter Symbol Unit a, b R t 10 s 32 40 30 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5 6.3 4.5 5.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J c Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = 0 V, I = 250 A Ch-1 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = 1 mA Ch-2 20 GS D V Temperature Coefficient V /T I = 250 A Ch-1 22 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A Ch-1 - 5 GS(th) GS(th) J D V = V , I = 250 A Ch-1 1 2.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 1 mA Ch-2 1.4 2.8 DS GS D V = 0 V, V = 16 V Ch-1 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 16 V Ch-2 100 DS GS V = 20 V, V = 0 V Ch-1 0.001 DS GS V = 20 V, V = 0 V Ch-2 0.05 0.50 DS GS I Zero Gate Voltage Drain Current mA DSS V = 20 V, V = 0 V, T = 100 C Ch-1 0.025 DS GS J V = 20 V, V = 0 V, T = 100 C Ch-2 3 15 DS GS J V = 5 V, V = 10 V Ch-1 10 DS GS d I A On-State Drain Current D(on) V = 5 V, V = 10 V Ch-2 10 DS GS V = 10 V, I = 5 A Ch-1 0.018 0.022 GS D V = 10 V, I = 5 A Ch-2 0.012 0.015 GS D d R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A Ch-1 0.020 0.025 GS D V = 4.5 V, I = 4 A Ch-2 0.015 0.019 GS D V = 15 V, I = 5 A Ch-1 40 DS D d g S Forward Transconductance fs V = 15 V, I = 5 A Ch-2 47 DS D c Dynamic Ch-1 1010 C Input Capacitance iss Channel-1 Ch-2 1370 V = 10 V, V = 0 V, f = 1 MHz DS GS Ch-1 220 C Output Capacitance pF oss Ch-2 320 Channel-2 V = 10 V, V = 0 V, f = 1 MHz Ch-1 100 DS GS Reverse Transfer Capacitance C rss Ch-2 120 Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 88 C/W (channel-1) and 83 C/W (channel-2). c. Guaranteed by design, not subject to production testing. d. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 68391 2 S13-0631-Rev. D, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000