Product Information

SI8802DB-T2-E1

SI8802DB-T2-E1 electronic component of Vishay

Datasheet
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5048 ea
Line Total: USD 0.5

4657 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.2155
10 : USD 0.2133
25 : USD 0.2112
50 : USD 0.2092
100 : USD 0.1787
250 : USD 0.1467
500 : USD 0.1436
1000 : USD 0.1436
3000 : USD 0.1436

2101 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.3277
10 : USD 0.2725
30 : USD 0.2448
100 : USD 0.2176
500 : USD 0.2013
1000 : USD 0.1928

4657 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.5048
10 : USD 0.3599
100 : USD 0.2197
1000 : USD 0.1587
3000 : USD 0.1392
9000 : USD 0.1322
24000 : USD 0.1322
45000 : USD 0.1276
99000 : USD 0.1265

2910 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 132
Multiples : 1
132 : USD 0.2906
200 : USD 0.2891
500 : USD 0.2356
1000 : USD 0.2202
2000 : USD 0.215

2910 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 53
Multiples : 1
53 : USD 0.2092
100 : USD 0.1787
250 : USD 0.1467
500 : USD 0.1436

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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The Vishay SI8802DB-T2-E1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in an ultra-small micro-foot (also known as a SuperSOT) measuring 0.8 x 0.8 mm. This device is ideal for use in high-frequency, low-power applications where board space is at a premium, such as in portable consumer electronics. It features excellent thermal performance and has a Vds (drain-to-source voltage) rating of 8V and a Vgs (gate-to-source voltage) rating of 5V. It has a maximum junction temperature of 175°C and a maximum continuous drain current of 220mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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