SI8802DB-T2-E1 Vishay

SI8802DB-T2-E1 electronic component of Vishay
SI8802DB-T2-E1 Vishay
SI8802DB-T2-E1 MOSFETs
SI8802DB-T2-E1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI8802DB-T2-E1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI8802DB-T2-E1 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI8802DB-T2-E1
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Datasheet: SI8802DB-T2-E1 Datasheet (PDF)
Price (USD)
1: USD 0.6025 ea
Line Total: USD 0.6 
Availability : 3111
  
Ship by Mon. 10 Nov to Wed. 12 Nov
QtyUnit Price
1$ 0.6025
10$ 0.3725
100$ 0.2052
500$ 0.1848
1000$ 0.1716
3000$ 0.1265
6000$ 0.1265
9000$ 0.121

Availability 3111
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6025
10$ 0.3725
100$ 0.2052
500$ 0.1848
1000$ 0.1716
3000$ 0.1265
6000$ 0.1265
9000$ 0.121


Availability 292
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.392
10$ 1.085
30$ 0.6975
100$ 0.5249
500$ 0.4633
1000$ 0.4316


Availability 2871
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 359
Multiples : 1
QtyUnit Price
359$ 0.7254
580$ 0.4485
1059$ 0.2457

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI8802DB-T2-E1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI8802DB-T2-E1 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI8802DB-T2-E1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in an ultra-small micro-foot (also known as a SuperSOT) measuring 0.8 x 0.8 mm. This device is ideal for use in high-frequency, low-power applications where board space is at a premium, such as in portable consumer electronics. It features excellent thermal performance and has a Vds (drain-to-source voltage) rating of 8V and a Vgs (gate-to-source voltage) rating of 5V. It has a maximum junction temperature of 175°C and a maximum continuous drain current of 220mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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