Si9433BDY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.040 at V = - 4.5 V - 6.2 GS Compliant to RoHS Directive 2002/95/EC - 20 0.060 at V = - 2.7 V - 5.0 GS SO-8 S SD 1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si9433BDY-T1-E3 (Lead (Pb)-free) Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 12 GS T = 25 C - 6.2 - 4.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.0 - 3.5 A A I Pulsed Drain Current - 20 DM a I - 2.3 - 1.2 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 45 50 a R Maximum Junction-to-Ambient thJA Steady State 80 95 C/W Maximum Junction-to-Foot (Drain) Steady State R 20 24 thJF Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 72755 www.vishay.com S09-0870-Rev. B, 18-May-09 1Si9433BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J V - 5 V, V = - 4.5 V - 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 2.7 V - 5 DS GS V = - 4.5 V, I = - 6.2 A 0.030 0.040 GS D b R Drain-Source On-State Resistance DS(on) V = - 2.7 V, I = - 5.0 A 0.050 0.060 GS D b g V = - 9 V, I = - 6.2 A 15 S Forward Transconductance fs DS D b V I = - 2.6 A, V = 0 V - 0.76 - 1.1 V Diode Forward Voltage SD S GS a Dynamic Total Gate Charge Q 8.8 14 g Q V = - 6 V, V = - 4.5 V, I = - 6.2 A Gate-Source Charge 1.8 nC gs DS GS D Gate-Drain Charge Q 2.4 gd R Gate Resistance 8.5 g t Turn-On Delay Time 40 60 d(on) t Rise Time V = - 6 V, R = 6 55 85 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 65 100 ns d(off) t Fall Time 30 45 f t I = - 2.3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 35 55 rr F Notes: a. For design aid only not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 V thru 3 V GS 16 16 2.5 V 12 12 8 8 2 V T = 125 C C 4 4 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72755 2 S09-0870-Rev. B, 18-May-09 I - Drain Current (A) D I - Drain Current (A) D