0.8 mm Si8819EDB www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, e V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Small 0.8 mm x 0.8 mm outline area 0.080 at V = -3.7 V -2.9 GS Low 0.4 mm max. profile 0.100 at V = -2.5 V -2.6 GS -12 7 nC Typical ESD protection 1700 V HBM 0.190 at V = -1.8 V -1.9 GS Material categorization: 0.280 at V = -1.5 V -0.5 GS for definitions of compliance please see www.vishay.com/doc 99912 MICRO FOOT 0.8 x 0.8 S APPLICATIONS S 22 SS Load switches and battery switches 33 High speed switching For smart phones, tablet PCs, and G 11 mobile computing GG 44 1 D Backside View Bump Side View Marking Code: xx = AK D xxx = Date/Lot traceability code P-Channel MOSFET Ordering Information: Si8819EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS a T = 25 C -2.9 A a T = 70 C -2.3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -2.1 A b T = 70 C -1.7 A A Pulsed Drain Current (t = 100 s) I -15 DM a T = 25 C -0.7 C Continuous Source-Drain Diode Current I S b T = 25 C -0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum Power Dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A S15-0346-Rev. B, 23-Feb-15 Document Number: 62963 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8819EDB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b Maximum Junction-to-Ambient t = 5 s 105 135 R C/W thJA c, d Maximum Junction-to-Ambient t = 5 s 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 185 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 330 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -12 - - V DS GS D V Temperature Coefficient V /T --7- DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.7 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -0.9 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.2 DS GS Gate-Source Leakage I A GSS V = 0 V, V = 8 V - - 1 DS GS V = -12 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -12 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -3.7 V -5 - - A D(on) DS GS V = -3.7 V, I = -1.5 A - 0.063 0.080 GS D V = -2.5 V, I = -1.5 A - 0.079 0.100 GS D a Drain-Source On-State Resistance R DS(on) V = -1.8 V, I = -1 A - 0.118 0.190 GS D V = -1.5 V, I = -0.1 A - 0.180 0.280 GS D a Forward Transconductance g V = -5 V, I = -1.5 A - 7 - S fs DS D b Dynamic Input Capacitance C - 620 - iss Output Capacitance C V = -6 V, V = 0 V, f = 1 MHz - 140 - pF oss DS GS Reverse Transfer Capacitance C -130- rss V = -6 V, V = -8 V, I = -1.5 A - 12 17 DS GS D Total Gate Charge Q g -7 8 nC Gate-Source Charge Q V = -6 V, V = -4.5 V, I = -1.5 A -0.9 - gs DS GS D Gate-Drain Charge Q -1.9- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 15 - g GS Turn-On Delay Time t -17 30 d(on) Rise Time t -23 45 r V = -6 V, R = 4 DD L I -1.5 A, V = -4.5 V, R = 1 D GEN g Turn-Off Delay Time t -4490 d(off) Fall Time t -30 60 f ns Turn-On Delay Time t -7 15 d(on) Rise Time t -16 30 r V = -6 V, R = 4 DD L I -1.5 A, V = -8 V, R = 1 D GEN g Turn-Off Delay Time t -58120 d(off) Fall Time t -31 60 f S15-0346-Rev. B, 23-Feb-15 Document Number: 62963 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000