SIR688DP-T1-GE3 Vishay

SIR688DP-T1-GE3 electronic component of Vishay
SIR688DP-T1-GE3 Vishay
SIR688DP-T1-GE3 MOSFETs
SIR688DP-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIR688DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR688DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SIR688DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Datasheet: SIR688DP-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.9705 ea
Line Total: USD 2911.5 
Availability : 0
  
QtyUnit Price
3000$ 0.9705

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.9705


Availability 0
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.7595
10$ 3.3178
30$ 3.0409
100$ 2.7581
500$ 2.6302
1000$ 2.5741


Availability 0
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.4111
10$ 1.9573
25$ 1.8434
100$ 1.5741
500$ 1.2945
1000$ 1.077
3000$ 1.0356

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIR688DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR688DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIR688DP-T1-GE3 is a silicon carbide CoolMOS™ P-channel power MOSFET with outstanding switching performance and ultra low RDS(on). This device is manufactured by Vishay and features a 60V drain-to-source voltage (Vds), a 20V gate-to-source voltage (Vgs), and an ultra-small, PowerPAK SO-8 (Low-Gate Charge) package. This device has a high peak current capability and its low intrinsic capacitances make it ideal for use in switching and general-purpose applications. It has a very low on-resistance of 145 mOhms @ 4.5V Vgs. The SIR688DP-T1-GE3 is a P-channel MOSFET and provides low-switch losses and high efficiency in switching power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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