X-On Electronics has gained recognition as a prominent supplier of SIR688DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR688DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR688DP-T1-GE3 Vishay

Name: SIR688DP-T1-GE3
Brand: Vishay
SKU: SIR688DPT1GE3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SIR688DP-T1-GE3 electronic component of Vishay

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Part No.	SIR688DP-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Datasheet:	SIR688DP-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 1.0023 ea
Line Total: USD 3006.9

Availability - 0

MOQ: 3000 Multiples: 3000
Pack Size: 3000

SIR688DP-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 24 Jun to Mon. 30 Jun MOQ : 3000 Multiples : 3000	3000 : USD 1.0023

0 Ship by Tue. 01 Jul to Fri. 04 Jul MOQ : 1 Multiples : 1	1 : USD 3.7595 10 : USD 3.3178 30 : USD 3.0409 100 : USD 2.7581 500 : USD 2.6302 1000 : USD 2.5741

0 Ship by Fri. 20 Jun to Tue. 24 Jun MOQ : 1 Multiples : 1	1 : USD 5.4111 10 : USD 1.9573 25 : USD 1.8434 100 : USD 1.5741 500 : USD 1.2945 1000 : USD 1.077 3000 : USD 1.0356

We are delighted to provide the SIR688DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR688DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIR688DP-T1-GE3 is a silicon carbide CoolMOS™ P-channel power MOSFET with outstanding switching performance and ultra low RDS(on). This device is manufactured by Vishay and features a 60V drain-to-source voltage (Vds), a 20V gate-to-source voltage (Vgs), and an ultra-small, PowerPAK SO-8 (Low-Gate Charge) package. This device has a high peak current capability and its low intrinsic capacitances make it ideal for use in switching and general-purpose applications. It has a very low on-resistance of 145 mOhms @ 4.5V Vgs. The SIR688DP-T1-GE3 is a P-channel MOSFET and provides low-switch losses and high efficiency in switching power supplies.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Vishay / BC Components
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Vishay / Dale
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Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
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Vishay / Polytech
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Vishay / Siliconix
Vishay / Spectrol
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Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
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Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
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Vishay Precision Group
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VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON E E
Id - Continuous Drain Current 60 A 60 A
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Rds On - Drain-Source Resistance 2.9 mOhms 2.9 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.3 V 1.3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 83 W 83 W
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERPAK - SO - 8 POWERPAK - SO - 8
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 66 nC 66 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet, Powerpak Trenchfet, Powerpak
Configuration Single Single
Height 1.04 mm 1.04 mm
Length 6.15 mm 6.15 mm
Series Sir Sir
Transistor Type 1 N - Channel 1 N - Channel
Width 5.15 mm 5.15 mm
Brand Vishay / Siliconix Vishay / Siliconix
Forward Transconductance - Min 70 S 70 S
Fall Time 8 ns 8 ns
Product Type Mosfet Mosfet
Rise Time 8 ns 8 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 31 ns 31 ns
Typical Turn-On Delay Time 15 ns 15 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000