X-On Electronics has gained recognition as a prominent supplier of SIA427DJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA427DJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA427DJ-T1-GE3 Vishay

SIA427DJ-T1-GE3 electronic component of Vishay
SIA427DJ-T1-GE3 Vishay
SIA427DJ-T1-GE3 MOSFETs
SIA427DJ-T1-GE3  Semiconductors

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See Product Specifications
Part No. SIA427DJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet: SIA427DJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1184 ea
Line Total: USD 355.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.3713
6000 : USD 0.3675
9000 : USD 0.364
12000 : USD 0.3603
15000 : USD 0.3567
24000 : USD 0.3531
30000 : USD 0.3496
75000 : USD 0.3461
150000 : USD 0.3427

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2563
6000 : USD 0.2302
15000 : USD 0.2143
30000 : USD 0.2032

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 1
Multiples : 1
1 : USD 0.7148
10 : USD 0.5955
100 : USD 0.4445
500 : USD 0.3493
1000 : USD 0.2699

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 1
Multiples : 1
1 : USD 0.7148
10 : USD 0.5955
100 : USD 0.4445
500 : USD 0.3493
1000 : USD 0.2699

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1184
6000 : USD 0.1165
9000 : USD 0.1159
12000 : USD 0.1153
15000 : USD 0.1134

0
Ship by Tue. 27 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 1.0688
10 : USD 1.0445
30 : USD 1.0249
100 : USD 1.0079

0
Ship by Fri. 16 May to Tue. 20 May
MOQ : 1
Multiples : 1
1 : USD 0.6765
10 : USD 0.5177
100 : USD 0.3421
500 : USD 0.2579
1000 : USD 0.2215
3000 : USD 0.1932
6000 : USD 0.1852
9000 : USD 0.1852

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 258
Multiples : 3000
258 : USD 0.1969

0
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2204

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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We are delighted to provide the SIA427DJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA427DJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiA427DJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK V (V) R ()I (A) Q (Typ.) DS DS(on) D g a SC-70 Package 0.016 at V = - 4.5 V - 12 GS - Small Footprint Area a 0.0215 at V = - 2.5 V - 12 GS - Low On-Resistance a - 8 0.026 at V = - 1.8 V - 12 30 nC 100 % R Tested GS g a Material categorization: 0.032 at V = - 1.5 V - 12 GS For definitions of compliance please see 0.095 at V = - 1.2 V - 3 GS www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS Load Switch, for 1.2 V Power Line for 1 D Portable and Handheld Devices 2 D S 3 G D Marking Code 6 S D G 5 B N X 2.05 mm S Part code 2.05 mm 4 X X X Lot Traceability and Date code Ordering Information: D SiA427DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA427DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 8 DS V Gate-Source Voltage V 5 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 12 A b, c T = 70 C A - 9.9 A Pulsed Drain Current I - 50 DM a T = 25 C - 12 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 66711 For more information please contact: pmostechsupport vishay.com www.vishay.com S12-1141-Rev. C, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA427DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 5.8 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.35 - 0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 10 A D(on) DS GS V = - 4.5 V, I = - 8.2 A 0.013 0.016 GS D V = - 2.5 V, I = - 7.2 A 0.018 0.0215 GS D a Drain-Source On-State Resistance R V = - 1.8 V, I = - 6.6 A 0.021 0.026 DS(on) GS D V = - 1.5 V, I = - 1 A 0.025 0.032 GS D V = - 1.2 V, I = - 1 A 0.037 0.095 GS D a Forward Transconductance g V = - 4 V, I = - 8.2 A 37 S fs DS D b Dynamic Input Capacitance C 2300 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 735 pF oss DS GS Reverse Transfer Capacitance C 690 rss V = - 4 V, V = - 5 V, I = - 10 A 33 50 DS GS D Total Gate Charge Q g 30 45 nC Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 10 A 3 gs DS GS D Gate-Drain Charge Q 6.6 gd Gate Resistance R f = 1 MHz 2 9 18 g Turn-On Delay Time t 20 30 d(on) Rise Time t 20 30 r V = - 4 V, R = 0.4 DD L ns I - 9.8 A, V = - 4.5 V, R = 1 70105 Turn-Off Delay Time t D GEN g d(off) Fall Time t 40 60 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I - 50 SM Body Diode Voltage V I = - 9.8 A, V = 0 - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 40 80 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = - 9.8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For more information please contact: pmostechsupport vishay.com Document Number: 66711 2 S12-1141-Rev. C, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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