X-On Electronics has gained recognition as a prominent supplier of SIA429DJT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA429DJT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA429DJT-T1-GE3 Vishay

Name: SIA429DJT-T1-GE3
Brand: Vishay
SKU: SIA429DJTT1GE3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SIA429DJT-T1-GE3 electronic component of Vishay

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Part No.	SIA429DJT-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70
Datasheet:	SIA429DJT-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.2807 ea
Line Total: USD 1.28

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SIA429DJT-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.215 6000 : USD 0.2092

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2781 6000 : USD 0.2596

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 1 Multiples : 1	1 : USD 0.7854 10 : USD 0.649 100 : USD 0.4845 500 : USD 0.3806 1000 : USD 0.2941

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2336 6000 : USD 0.2309 9000 : USD 0.2282 12000 : USD 0.2282 15000 : USD 0.2242

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 1 Multiples : 1	1 : USD 0.3785 30 : USD 0.3602 75 : USD 0.3249 150 : USD 0.3067 375 : USD 0.2835 750 : USD 0.2555 1500 : USD 0.2482

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2271

0 Ship by Wed. 21 May to Mon. 26 May MOQ : 1 Multiples : 1	1 : USD 0.8021 10 : USD 0.7865 30 : USD 0.7766 100 : USD 0.7667

0 Ship by Mon. 12 May to Wed. 14 May MOQ : 1 Multiples : 1	1 : USD 1.2807 10 : USD 0.5923 100 : USD 0.3352 500 : USD 0.2716 1000 : USD 0.2238 3000 : USD 0.2069 6000 : USD 0.196 9000 : USD 0.1761 24000 : USD 0.1751

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2493

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.3078

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2489 6000 : USD 0.2464 9000 : USD 0.2304 15000 : USD 0.2281 21000 : USD 0.2259 24000 : USD 0.2235 30000 : USD 0.2213

0 Ship by Wed. 14 May to Tue. 20 May MOQ : 3000 Multiples : 3000	3000 : USD 0.26

We are delighted to provide the SIA429DJT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA429DJT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIA429DJT-T1-GE3 with MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70 manufactured by Vishay is an N-channel enhancement mode vertical DMOS field-effect transistor (FET) for high voltage switching applications. This device features low on-resistance and low gate charge, low gate-to-drain feedback capacitance, fast switching performance and improved ESD protection. The low gate and drain to source capacitance makes this device suitable for high frequency applications. With a low Vds figure of -20V and a Vgs figure of 8V, this transistor is designed to operate at higher voltages compared to other similar parts. It is designed to fit into the SC-70 package which allows for high density circuit board mounting. This component is ideal for applications such as motor control, DC-DC converters, power management and circuit protection.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 12 A 12 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 20.5 mOhms 20.5 mOhms
Transistor Polarity P - Channel P - Channel
Vgs th - Gate-Source Threshold Voltage 1 V 1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 3.5 W 3.5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SC - 70 SC - 70
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 8 V 8 V
Qg - Gate Charge 62 nC 62 nC
Tradename Trenchfet, Powerpak Trenchfet, Powerpak
Configuration Single Single
Series Sia4xxdj Sia4xxdj
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current - 12 A - 12 A
Drain-Source Breakdown Voltage - 20 V - 20 V
Forward Transconductance - Min 30 S 30 S
Power Dissipation 19 W 19 W
Rds On 20.5 Mohms 20.5 Mohms
Factory Pack Quantity : 3000 3000
Cnhts 8541210000 8541210000
Hts Code 8541210095 8541210095
Mxhts 85412101 85412101
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000