New Product SiB404DK Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.019 at V = 4.5 V 9 GS TrenchFET Power MOSFET 0.022 at V = 2.5 V 9 GS New Thermally Enhanced PowerPAK 12 9.6 nC 0.026 at V = 1.8 V 9 SC-75 Package GS - Small Footprint Area 0.065 at V = 1.2 V 3 GS - Low On-Resistance - Thin 0.75 mm Profile PowerPAK SC-75-6L-Single 100 % R Tested g Compliant to RoHS Directive 2002/95/EC D APPLICATIONS 1 D Portable Devices 2 D Low Voltage Gate Drive Load Switch 3 Marking Code G G D 6 A I X S D Part code 5 X X X 1.60 mm S Lot Traceability 1.60 mm S 4 and Date code Ordering Information: SiB404DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 12 DS V V Gate-Source Voltage GS 5 a T = 25 C 9 C a T = 70 C 9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 8.9 A b, c T = 70 C 7.1 A A Pulsed Drain Current I 35 DM a T = 25 C 9 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.1 A T = 25 C 13 C T = 70 C 8.4 C P Maximum Power Dissipation W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f R t 5 s 41 51 Maximum Junction-to-Ambient thJA C/W R Steady State 7.5 9.5 Maximum Junction-to-Case (Drain) thJC Notes: a. Package limited, T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 67099 www.vishay.com S11-0236-Rev. A, 14-Feb-11 1New Product SiB404DK Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.35 0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 3 A 0.015 0.019 GS D V = 2.5 V, I = 2 A 0.018 0.022 GS D a R Drain-Source On-State Resistance DS(on) V = 1.8 V, I = 1 A 0.021 0.026 GS D V = 1.2 V, I = 0.5 A 0.035 0.065 GS D a g V = 10 V, I = 3 A 30 S Forward Transconductance fs DS D b Dynamic Q Total Gate Charge 9.6 15 g Q V = 6 V, V = 4.5 V, I = 9 A Gate-Source Charge 0.9 nC gs DS GS D Q Gate-Drain Charge 1.7 gd R Gate Resistance f = 1 MHz 0.6 3.2 6.4 g t Turn-On Delay Time 510 d(on) t V = 6 V, R = 0.86 Rise Time 20 40 r DD L ns t I 7 A, V = 4.5 V, R = 1 Turn-Off DelayTime 20 40 d(off) D GEN g t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 9 S C A I Pulse Diode Forward Current 35 SM V I = 7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = 7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67099 2 S11-0236-Rev. A, 14-Feb-11