P GND V IN GH GL C GND Gate Driver VDRV PWM Controller SiC762CD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES Integrated Gen III MOSFETs and DrMOS The SiC762CD is an integrated solution that contains PWM compliant gate driver IC optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with Enables V switching at 1 MHz core the Intel DrMOS standard for desktop and server V power Easily achieve > 90 % efficiency in multi-phase, core stages. The SiC762CD delivers up to 35 A continuous output low output voltage solutions current and operates from an input voltage range of 3 V to Low ringing on the VSWH pin reduces EMI 27 V. The integrated MOSFETs are optimized for output Pin compatible with DrMOS 6 x 6 version 3.0 voltages in the ranges of 0.8 V to 2.0 V with a nominal input Tri-state PWM input function prevents negative output voltage of 24 V. The device can also deliver very high power voltage swing at 5 V output for ASIC applications. 5 V logic levels on PWM The SiC762CD incorporates an advanced MOSFET gate MOSFET threshold voltage optimized for 5 V driver bias driver IC. This IC accepts a single PWM input from the V R supply controller and converts it into the high side and low side Automatic skip mode operation (SMOD) for light load MOSFET gate drive signals. The driver IC is designed to efficiency implement the skip mode (SMOD) function for light load Under-voltage lockout efficiency improvement. Adaptive dead time control also Built-in bootstrap schottky diode works to improve efficiency at all load points. The SiC762CD Adaptive deadtime and shoot through protection has a thermal warning (THDN) that alerts the system of Thermal shutdown warning flag excessive junction temperature. The driver IC includes an enable pin, UVLO and shoot through protection. Low profile, thermally enhanced PowerPAK MLP 6 x 6 40 pin package The SiC762CD is optimized for high frequency buck applications. Operating frequencies in excess of 1 MHz can Halogen-free according to IEC 61249-2-21 definition easily be achieved. Compliant to RoHS directive 2002/95/EC The SiC762CD is packaged in Vishay Siliconix high performance PowerPAK MLP6 x 6 package. Compact APPLICATIONS co-packaging of components helps to reduce stray CPU and GPU core voltage regulation inductance, and hence increases efficiency. Server, computer, workstation, game console, graphics boards, PC SIC762CD APPLICATION DIAGRAMM 5 V V IN V CIN SMOD BOOT DSBL V SWH V O PWM PHASE THDN SiC762CD Figure 1 Document Number: 65727 www.vishay.com S10-0275-Rev. A, 08-Feb-10 1SiC762CD Vishay Siliconix ORDERING INFORMATION Part Number Package SiC762CD-T1-GE3 PowerPAK MLP66-40 SiC762DB Reference board ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter SymbolMin.Max.Unit V Input Voltage - 0.3 30 IN Switch Node Voltage (DC) V - 0.3 30 SW Drive Input Voltage V - 0.3 7.0 DRV V Control Input Voltage - 0.3 7.0 CIN V V , V , PWM DSBL Logic Pins - 0.3 V + 0.3 CIN V , V THDN SMOD Boot Voltage DC (referenced to C)V - 0.3 33 GND BS Boot to Phase Voltage DC - 0.3 7 V BS PH Boot to Phase Voltage < 200 ns - 0.3 9 T Ambient Temperature Range - 40 125 A T Maximum Junction Temperature 150 J C T Storage Junction Temperature - 65 150 STG Soldering Peak Temperature 260 Note: a. T = 25 C and all voltages referenced to P = C unless otherwise noted. A GND GND Stresses beyond those listed underAbsolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter SymbolMin.Typ.Max.Unit Input Voltage V 3.0 12 24 IN Control Input Voltage V 4.5 5.5 CIN V Drive Input Voltage V 4.5 5.5 DRV Switch Node V 12 24 SW DC Note: a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to P = C unless GND GND otherwise noted. THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Power Dissipation at T = 25 C P 25 PCB D 25C W Maximum Power Dissipation at T = 100 C P 10 PCB D 100C Thermal Resistance from Junction to Top R 15 th J TOP C/W Thermal Resistance from Junction to PCB R 5 th J PCB www.vishay.com Document Number: 65727 2 S10-0275-Rev. A, 08-Feb-10