P GND V IN GH GL C GND Gate Driver V DRV PWM Controller SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES Industry benchmark Gen III MOSFETs with The SiC779 is an integrated solution that contains PWM integrated Schottky diode optimized n-channel MOSFETs (high side and low side) and DrMOS compliant gate driver IC a full featured MOSFET driver IC. The device complies with Enables V switching at 1 MHz the Intel DrMOS standard for desktop and server V power core core Easily achieve > 93 % efficiency in multi-phase, stages. The SiC779 delivers up to 40 A continuous output low output voltage solutions current and operates from an input voltage range of 3 V to Low ringing on the VSWH pin reduces EMI 16 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input Pin compatible with DrMOS 6 x 6 version 4.0 voltage of 12 V. The device can also deliver very high power Tri-state PWM input function prevents negative output at 5 V output for ASIC applications. voltage swing The SiC779 incorporates an advanced MOSFET gate driver 5 V logic levels on PWM IC. This IC accepts a single PWM input from the V controller MOSFET threshold voltage optimized for 5 V driver bias R and converts it into the high side and low side MOSFET gate supply drive signals. The driver IC is designed to implement the skip Automatic skip mode operation (SMOD) for light load mode (SMOD) function for light load efficiency improvement. efficiency Adaptive dead time control also works to improve efficiency Under-voltage lockout at all load points. The SiC779 has a thermal warning (THDN) Built-in bootstrap schottky diode that alerts the system of excessive junction temperature. The Adaptive deadtime and shoot through protection driver IC includes an enable pin, UVLO and shoot through Thermal shutdown warning flag protection. Low profile, thermally enhanced PowerPAK MLP 6 x 6 The SiC779 is optimized for high frequency buck 40 pin package applications. Operating frequencies in excess of 1 MHz can Halogen-free according to IEC 61249-2-21 definition easily be achieved. Compliant to RoHS Directive 2002/95/EC The SiC779 is packaged in Vishay Siliconix high performance PowerPAK MLP 6 x 6 package. Compact APPLICATIONS co-packaging of components helps to reduce stray CPU and GPU core voltage regulation inductance, and hence increases efficiency. Server, computer, workstation, game console, graphics boards, PC SiC779 APPLICATION DIAGRAM 5 V V IN V CIN SMOD BOOT DSBL V SWH V O PWM PHASE THDN SiC779CD Figure 1 Document Number: 67538 www.vishay.com S11-0703-Rev. B, 18-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiC779 Vishay Siliconix ORDERING INFORMATION Part Number Package SiC779CD-T1-GE3 PowerPAK MLP66-40 SiC779DB Reference board ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter SymbolMin.Max.Unit V Input Voltage - 0.3 20 IN V Switch Node Voltage (DC) - 0.3 20 SW Drive Input Voltage V - 0.3 7 DRV V Control Input Voltage - 0.3 7 CIN V , V , PWM DSBL Logic Pins - 0.3 V + 0.3 V CIN V , V THDN SMOD Boot Voltage DC (referenced to C ) - 0.3 27 GND V BS Boot Voltage < 200 ns Transient (referenced to C ) - 0.3 29 GND Boot to Phase Voltage DC - 0.3 7 V BS PH Boot to Phase Voltage < 200 ns - 0.3 9 T Ambient Temperature Range - 40 125 A T Maximum Junction Temperature 150 J Storage Junction Temperature T - 65 150 C STG Soldering Peak Temperature 260 Note: a. T = 25 C and all voltages referenced to P = C unless otherwise noted. A GND GND Stresses beyond those listed underAbsolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter SymbolMin.Typ.Max.Unit Input Voltage V 312 16 IN Control Input Voltage V 4.5 5.5 CIN V Drive Input Voltage V 4.5 5.5 DRV Switch Node V 12 16 SW DC Note: a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to P = C unless GND GND otherwise noted. THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Power Dissipation at T = 25 C P 25 PCB D 25C W Maximum Power Dissipation at T = 100 C P 10 PCB D 100C Thermal Resistance from Junction to Top R 15 th J TOP C/W Thermal Resistance from Junction to PCB R 5 th J PCB www.vishay.com Document Number: 67538 2 S11-0703-Rev. B, 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000