SiHB24N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES D 2 Fast body diode MOSFET using E series D PAK (TO-263) technology , Q , and I Reduced t rr rr RRM Low figure-of-merit (FOM) R x Q on g G Low input capacitance (C ) iss Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g D G Avalanche energy rated (UIS) S S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) at T max. 700 DS J Lighting R max. ( ) at 25 C V = 10 V 0.156 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 122 g - Fluorescent ballast lighting Q (nC) 17 gs Consumer and computing - ATX power supplies Q (nC) 36 gd Industrial Configuration Single - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION 2 Package D PAK (TO-263) SiHB24N65EF-GE3 Lead (Pb)-free and halogen-free SiHB24N65EFT1-GE3 SIHB24N65EFT5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 24 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 15 A C a Pulsed drain current I 65 DM Linear derating factor 2W/C b Single pulse avalanche energy E 691 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 50 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J S18-0015-Rev. D, 15-Jan-18 Document Number: 91609 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB24N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.68 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 12 A - 0.13 0.156 DS(on) GS D Forward transconductance g V = 30 V, I = 12 A - 7.2 - S fs DS D Dynamic Input capacitance C - 2774 - iss V = 0 V, GS Output capacitance C -V = 100 V, 128- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C -96 - o(er) a related V = 0 V to 520 V, V = 0 V DS GS Effective output capacitance, time C - 333 - o(tr) b related Total gate charge Q -81 122 g Gate-source charge Q -1V = 10 V I = 12 A, V = 520 V7- nC gs GS D DS Gate-drain charge Q -36- gd Turn-on delay time t -24 48 d(on) Rise time t -34 68 r V = 520 V, I = 12 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -8GS g 0120 d(off) Fall time t -4692 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 24 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 65 S SM Diode forward voltage V T = 25 C, I = 12 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 151 288 ns rr T = 25 C, I = I , J F S = 12 A Reverse recovery charge Q -0.9 2.1 C rr , V dI/dt = 100 A/s = 400 V R Reverse recovery current I -13 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0015-Rev. D, 15-Jan-18 Document Number: 91609 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000