SiHG44N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES D Fast body diode MOSFET using E series TO-247AC technology Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM): R x Q on g G Low input capacitance (C ) iss Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g S Avalanche energy rated (UIS) D S G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) at T max. 700 DS J Lighting R typ. () at 25 C V = 10 V 0.063 DS(on) GS - High intensity discharge (HID) Q max. (nC) 278 g - Light emitting diodes (LEDs) Q (nC) 46 Consumer and computing gs - ATX power supplies Q (nC) 76 gd Industrial Configuration Single - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG44N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 46 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 29 A C a Pulsed drain current I 154 DM Linear derating factor 3.3 W/C b Single pulse avalanche energy E 596 mJ AS Maximum power dissipation P 417 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 50 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6.5 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 110 A/s, starting T = 25 C SD D J S19-0136-Rev. B, 18-Feb-2019 Document Number: 91792 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG44N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.3 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 10 mA - 0.75 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 22 A - 0.063 0.073 DS(on) GS D a Forward transconductance g V = 30 V, I = 22 A - 17 - S fs DS D Dynamic Input capacitance C - 5892 - iss V = 0 V, GS Output capacitance C -V = 100 V, 244- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C - 178 - a o(er) related V = 0 V, V = 0 V to 520 V GS DS b Effective output capacitance, time related C - 739 - o(tr) Total gate charge Q - 185 278 g Gate-source charge Q -4V = 10 V I = 22 A, V = 520 V 6- nC gs GS D DS Gate-drain charge Q -76- gd Turn-on delay time t -46 92 d(on) Rise time t - 77 116 r V = 520 V, I = 22 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -g GS 157236 d(off) Fall time t -100150 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 46 S showing the A G integral reverse Pulsed diode forward current I - - 154 SM S p - n junction diode Diode forward voltage V T = 25 C, I = 22 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 245 404 ns rr T = 25 C, I = I = 22 A, J F S Reverse recovery charge Q -2.2 3.0 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -26 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S19-0136-Rev. B, 18-Feb-2019 Document Number: 91792 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000