SIR846ADP-T1-GE3 Vishay

SIR846ADP-T1-GE3 electronic component of Vishay
SIR846ADP-T1-GE3 Vishay
SIR846ADP-T1-GE3 MOSFETs
SIR846ADP-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIR846ADP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR846ADP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SIR846ADP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 7.8mOhm@10V 60A N-Ch MV T-FET
Datasheet: SIR846ADP-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 1.325 ea
Line Total: USD 3975 
Availability : 0
  
QtyUnit Price
3000$ 1.325

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.2956
6000$ 1.2835
9000$ 1.2715
12000$ 1.2594
15000$ 1.2473
21000$ 1.2352
24000$ 1.2231
30000$ 1.2148


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8635
10$ 2.4758
100$ 1.99
500$ 1.635
1000$ 1.4014


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.4533


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8635
10$ 2.4758
100$ 1.99
500$ 1.635
1000$ 1.4014


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.6465
10$ 1.8962
25$ 1.6473
100$ 1.3519
250$ 1.3519
500$ 1.1474
1000$ 1.077
3000$ 1.035


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.325


Availability 0
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9428
10$ 1.902
30$ 1.877
100$ 1.8497


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.6515

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIR846ADP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR846ADP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIR846ADP-T1-GE3 is a MOSFET module manufactured by Vishay. It consists of a 100V N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device allows for a high drain-source voltage combined with a single-ended gates drive. It features an on-resistance (RDS(ON)) of 7.8 mOhm at a gate-source voltage of 10V and a maximum continuous drain current (ID) of 60A. The module has a thermal resistance junction-ambient rating of 150°C/W. It features a flat top construction as well as high current and high voltage ratings. The device is suitable for high frequency switching applications, power management, and power sequencing.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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