Product Information

SIR846ADP-T1-GE3

SIR846ADP-T1-GE3 electronic component of Vishay

Datasheet
MOSFET 100V 7.8mOhm@10V 60A N-Ch MV T-FET

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0299 ea
Line Total: USD 1.03

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 1.0802
6000 : USD 0.9846
9000 : USD 0.9748

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 2.9544
10 : USD 2.5544
100 : USD 2.0532
500 : USD 1.6869
1000 : USD 1.4459

0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 1.4995

0 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 2.9544
10 : USD 2.5544
100 : USD 2.0532
500 : USD 1.6869
1000 : USD 1.4459

0 - WHS 5


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 1.971

0 - WHS 6


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0299
10 : USD 1.0073
30 : USD 0.9896
100 : USD 0.9721

0 - WHS 7


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1713
10 : USD 1.8628
100 : USD 1.5187
250 : USD 1.4001
500 : USD 1.317
1000 : USD 1.1474
3000 : USD 1.1248

0 - WHS 8


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 1.7039

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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The SIR846ADP-T1-GE3 is a MOSFET module manufactured by Vishay. It consists of a 100V N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device allows for a high drain-source voltage combined with a single-ended gates drive. It features an on-resistance (RDS(ON)) of 7.8 mOhm at a gate-source voltage of 10V and a maximum continuous drain current (ID) of 60A. The module has a thermal resistance junction-ambient rating of 150°C/W. It features a flat top construction as well as high current and high voltage ratings. The device is suitable for high frequency switching applications, power management, and power sequencing.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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