DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SC59 Low R : Case Material - Molded Plastic, Green Molding Compound. DS(ON) 30m V = 10V UL Flammability Classification Rating 94V-0 GS 40m V = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 GS Low Input/Output Leakage Terminals: Finish Matte Tin Annealed over Copper Leadframe. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 e3 Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Weight: 0.014 grams (Approximate) Drain D SC59 Gate S G Source Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3033LSN-7 SC59 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3033LSN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current (Note 5) T = +25C 6 A I A D 5 TA = +70C Pulsed Drain Current (Note 6) 24 A I DM Body-Diode Continuous Current (Note 5) 2.25 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) t 10s R 90 C/W JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV 30 V I = 250A, V = 0V DSS D GS Zero Gate Voltage Drain Current T = +25C 1 J I A V = 30V, V = 0V DSS DS GS 5 T = +55C J Gate-Body Leakage Current I 100 nA V = 0V, V = 20V GSS DS GS Gate Threshold Voltage V 1.0 2.1 V V = V , I = 250A GS(TH) DS GS D 25 30 V = 10V, I = 6A GS D Static Drain-Source On-Resistance (Note 7) m RDS(ON) 36 40 V = 4.5V, I = 5A GS D Forward Transconductance (Note 7) 5 S g V = 10V, I = 8A FS DS D Diode Forward Voltage (Note 7) 0.7 1.1 V V I = 2.25A, V = 0V SD S GS DYNAMIC PARAMETERS (Note 8) Total Gate Charge 10.5 nC Q V = 5V, V = 15V, I = 6A g GS DS D Gate-Source Charge Q 3.8 nC V = 10V, V = 15V, I = 6A gs GS DS D Gate-Drain Charge Q 2.9 nC V = 10V, V = 15V, I = 6A gd GS DS D Turn-On Delay Time t 11 ns D(ON) Turn-On Rise Time t 7 ns R V = 15V, V = 10V, DD GS Turn-Off Delay Time t 63 ns R = 1.8, R = 6 D(OFF) D G Turn-Off Fall Time t 30 ns F Input Capacitance 755 pF C iss V = 10V, V = 0V DS GS Output Capacitance 136 pF C oss f = 1.0MHz Reverse Transfer Capacitance 108 pF C rss Notes: 5. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 6. Repetitive Rating, pulse width limited by junction temperature. 7. Test pulse width t = 300ms. 8. Guaranteed by design. Not subject to production testing. 2 of 5 July 2016 DMN3033LSN Diodes Incorporated www.diodes.com Document number: DS31116 Rev. 7 - 2