SUM90N03-2m2P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a, e V (V) R () Q (Typ.) I (A) 100 % R and UIS Tested DS DS(on) g D g Material categorization: 0.0022 at V = 10 V 90 GS 30 82 nC For definitions of compliance please see 0.0027 at V = 4.5 V 90 GS www.vishay.com/doc 99912 TO-263 APPLICATIONS D OR-ing Server G D G S T op V i e w S Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS a, e T = 25 C C 90 e T = 70 C C 90 Continuous Drain Current (T = 175 C) I J D b, c T = 25 C A 33 A b, c T = 70 C A 29.8 I Pulsed Drain Current 200 DM Avalanche Current Pulse I 36 AS L = 0.1 mH E Single Pulse Avalanche Energy 64.8 mJ AS a, e T = 25 C C 90 Continuous Source-Drain Diode Current I A S b, c T = 25 C A 3.13 a T = 25 C C 250 T = 70 C 175 C Maximum Power Dissipation P W D b, c T = 25 C A 3.75 b, c T = 70 C A 2.63 Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R Maximum Junction-to-Ambient t 10 s 32 40 thJA C/W R 0.5 0.6 Maximum Junction-to-Case Steady State thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. Document Number: 74342 For more information please contact: pmostechsupport vishay.com www.vishay.com S12-0680-Rev. C, 26-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM90N03-2m2P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min . Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 35 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 90 A D(on) DS GS V = 10 V, I = 32 A 0.0018 0.0022 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 29 A 0.0022 0.0027 GS D a g V = 15 V, I = 32 A 160 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 12065 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 1725 pF oss DS GS C Reverse Transfer Capacitance 970 rss V = 15 V, V = 10 V, I = 32 A 171 257 DS GS D Total Gate Charge Q g 81.5 123 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 29 A 34 gs DS GS D Gate-Drain Charge Q 29 gd R Gate Resistance f = 1 MHz 1.4 2.1 g t Turn-On Delay Time 18 27 d(on) t Rise Time V = 15 V, R = 0.555 11 17 r DD L I 27 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 70 105 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 55 83 d(on) t Rise Time V = 15 V, R = 0.625 180 270 r DD L I 24 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 55 83 d(off) Fall Time t 12 18 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 90 S C A a I 200 Pulse Diode Forward Current SM V I = 22 A Body Diode Voltage 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 52 78 ns rr Q Body Diode Reverse Recovery Charge 70.2 105 nC rr I = 20 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 27 a ns t Reverse Recovery Rise Time 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For more information please contact: pmostechsupport vishay.com Document Number: 74342 2 S12-0680-Rev. C, 26-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000