SUP60N10-18P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0183 at V = 10 V 60 GS Compliant to RoHS Directive 2002/95/EC 100 48 0.023 at V = 8.0 V 53 GS APPLICATIONS Industrial Power Supply T O-220AB D G GD S S T op V i e w Ordering Information: SUP60N10-18P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 60 C Continuous Drain Current (T = 175 C) I J D T = 70 C 50 C A I Pulsed Drain Current 100 DM I Avalanche Current 45 AS a E L = 0.1 mH 101 mJ Single Avalanche Energy AS b T = 25 C C 150 a P Maximum Power Dissipation W D c T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 40 Junction-to-Ambient (PCB Mount) thJA C/W R Junction-to-Case (Drain) 1.0 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). Document Number: 65003 www.vishay.com S09-1096-Rev. A, 15-Jun-09 1SUP60N10-18P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 2.5 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I V = 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 100 V, V = 0 V, T = 175 C 250 DS GS J a I V 10 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.015 0.0183 GS D a R V = 10 V, I = 15 A, T = 125 C 0.027 0.033 Drain-Source On-State Resistance DS(on) GS D J V = 8.0 V, I = 10 A 0.018 0.023 GS D a g V = 15 V, I = 15 A Forward Transconductance 33 S fs DS D b Dynamic Input Capacitance C 2600 iss C V = 0 V, V = 50 V, f = 1 MHz Output Capacitance 230 pF oss GS DS Reverse Transfer Capacitance C 80 rss c Q Total Gate Charge 48 75 g c Q V = 50 V, V = 10 V, I = 50 A 16 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 13 gd R Gate Resistance f = 1 MHz 0.25 1.1 2.4 g c t Turn-On Delay Time 12 20 d(on) c t V = 50 V, R = 1.0 10 20 Rise Time r DD L ns c I 50 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 18 35 d(off) c t 815 Fall Time f b Drain-Source Body Diode Characteristics T = 25 C C I Continuous Current 60 S A I Pulsed Current 100 SM a V I = 15 A, V = 0 V 0.85 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 80 120 ns rr I I = 50 A, dI/dt = 100 A/s Peak Reverse Recovery Current 4A RM(REC) F Q Reverse Recovery Charge 160 240 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65003 2 S09-1096-Rev. A, 15-Jun-09