TN0200K-T1-E3

New Product TN0200K Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( )I (A) DS DS(on) D ESD Protected: 4000 V 0.4 at V = 4.5 V 0.73 GS RoHS 20 COMPLIANT APPLICATIONS 0.5 at V = 2.5 V 0.65 GS Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching-Cell Phones, Pagers TO-236 D (SOT-23) Marking Code: K2ywl G 1 100 G K2 = Part Number Code for TN0200K 3 D y = Year Code S 2 w = Week Code l = Lot Traceability Top View Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 8 GS T = 25 C 0.73 A b I Continuous Drain Current (T = 150 C) D J T = 70 C 0.58 A A a I 4 Pulsed Drain Current DM b I 0.3 Continuous Source Current (Diode Conduction) S T = 25 C 0.35 A b P W Power Dissipation D T = 70 C 0.22 A T T Operating Junction and Storage Temperature Range - 55 to 150 C J, stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit b R 357 C/W Maximum Junction-to-Ambient thJA Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 10 sec. Document Number: 72678 www.vishay.com S-71198Rev. B, 18-Jun-07 1New Product TN0200K Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 20 (BR)DSS GS D V V V = V , I = 50 A Gate-Threshold Voltage 0.45 0.6 1.0 GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 5 GSS DS GS V = 20 V, V = 0 V 0.1 A DS GS I Zero Gate Voltage Drain Current DSS T = 55 C 10 J V 5 V, V = 4.5 V 2.5 DS GS a I A On-State Drain Current D(on) V 5 V, V = 2.5 V 1.5 DS GS V = 4.5 V, I = 0.6 A 0.2 0.4 GS D a r Drain-Source On-Resistance DS(on) V = 2.5 V, I = 0.6 A 0.25 0.5 GS D a g V = 5 V, I = 0.6 A 2.2 S Forward Transconductance fs DS D a V I = 0.3 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 1400 2000 g V = 10 V, V = 4.5 V DS GS Q Gate-Source Charge 190 pC gs I = 0.6 A D Q Gate-Drain Charge 300 gd R Gate Resistance 105 g t Turn-On Delay Time 17 25 d(on) V = 10 V, R = 16 DD L Rise Time t 20 30 r I 0.6 A, V = 4.5 V ns D GEN t Turn-Off Delay Time 55 85 d(off) R = 6 g t Fall TIme 30 45 f Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4 4.0 T = - 55 C J V = 5 thru 2.5 V GS 3.2 3 2 V 25 C 2.4 2 125 C 1.6 1.5 V 1 0.8 1 V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72678 2 S-71198Rev. B, 18-Jun-07 I Drain Current (A) D I Drain Current (A) D