VB20100S-E3/8W Vishay

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.446 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, 1 V20100S VF20100S per JESD 22-B106 (for TO-220AB, ITO-220AB, and PIN 1 PIN 1 PIN 2 PIN 2 TO-262AA package) CASE PIN 3 PIN 3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC 3 MECHANICAL DATA 2 VB20100S VI20100S 1 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and PIN 1 NC K PIN 2 TO-262AA A HEATSINK K PIN 3 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade click logo to get started DESIGN SUPPORT TOOLS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Models E3 suffix meets JESD 201 class 1A whisker test Available Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs max. I 20 A F(AV) V 100 V RRM I 250 A FSM V at I = 20 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100SVF20100SVB20100SVI20100SUNIT Max. repetitive peak reverse voltage V 100 V RRM Max. average forward rectified current (fig. 1) I 20 A F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed I 250 A FSM on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 210 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 1.0 A p J RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88975 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL TYP. MAX.UNIT Breakdown voltage I = 10 mA T = 25 C V 105 (min.) - V R A BR I = 5 A 0.51 - F I = 10 A T = 25 C 0.60 - F A I = 20 A 0.79 0.90 F (1) Instantaneous forward voltage V V F I = 5 A 0.45 - F I = 10 A T = 125 C 0.53 - F A I = 20 A 0.69 0.76 F T = 25 C 17 - A A V = 70 V R T = 125 C 7 - mA A (2) Reverse current I R T = 25 C 70 500 A A V = 100 V R T = 125 C 14 30 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100S VF20100S VB20100S VI20100S UNIT Typical thermal resistance R 2.0 4.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20100S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20100S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20100S-E3/4W 1.37 4W 50/tube Tube TO-263AB VB20100S-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI20100S-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 20 D = 0.8 Resistive or Inductive Load VB20100S D = 0.5 18 D = 0.3 20 V20100S 16 VI20100S 14 D = 0.2 16 12 D = 1.0 VF20100S D = 0.1 12 10 8 T 8 6 4 4 D = t /T t p p 2 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Jun-2018 Document Number: 88975 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)