VS-100BGQ045 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES 150 C max. operating junction temperature High frequency operation Ultralow forward voltage drop Cathode Anode Continuous high current operation Guard ring for enhanced ruggedness and long term reliability PowerTab Screw mounting only Designed and qualified according to JEDEC -JESD 47 PowerTab package PRODUCT SUMMARY Material categorization: for definitions of compliance Package PowerTab please see www.vishay.com/doc 99912 I 100 A F(AV) V 45 V R DESCRIPTION V at I 0.71 V The VS-100BGQ045 Schottky rectifier has been optimized F F for ultralow forward voltage drop specifically for low voltage I 320 mA at 125 C RM output in high current AC/DC power supplies. T max. 150 C J The proprietary barrier technology allows for reliable Diode variation Single die operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, E 40 mJ AS reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 100 A I F(AV) T 97 C C V 45 V RRM I t = 5 s sine 4400 A FSM p 100 A (typical) 0.65 V pk V F T 150 C J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL100BGQ045 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 97 C, rectangular waveform 100 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 4400 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 830 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 6 A, L = 2 mH 40 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 6A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Jun-15 Document Number: 94580 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-100BGQ045 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 50 A 0.54 0.58 T = 25 C J 100 A 0.69 0.77 (1) Forward voltage drop V V FM 50 A 0.48 0.52 T = 150 C J 100 A 0.65 0.71 T = 150 C, V = 45 V 600 1000 J R (1) Reverse leakage current I T = 25 C 0.3 1 mA RM J V = Rated V R R T = 125 C 180 320 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 2700 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.50 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.30 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 100BGQ045 Revision: 15-Jun-15 Document Number: 94580 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000