VS-100BGQ045HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES 150 C max. operating junction temperature High frequency operation Cathode Anode Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability PowerTab Screw mounting only AEC-Q101 qualified PRODUCT SUMMARY PowerTab package Package PowerTab Material categorization: for definitions of compliance I 100 A please see www.vishay.com/doc 99912 F(AV) V 45 V R DESCRIPTION V at I 0.71 V F F The VS-100BGQ045HF4 Schottky rectifier has been I 320 mA at 125 C RM optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. T max. 150 C J The proprietary barrier technology allows for reliable Diode variation Single die operation up to 150 C junction temperature. Typical E 40 mJ AS applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 100 A I F(AV) T 97 C C V 45 V RRM I t = 5 s sine 4400 A FSM p 100 A (typical) 0.65 V pk V F T 150 C J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL100BGQ045 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 97 C, rectangular waveform 100 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 4400 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 830 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 6 A, L = 2 mH 40 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 6A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Jun-15 Document Number: 93998 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-100BGQ045HF4 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 50 A 0.54 0.58 T = 25 C J 100 A 0.69 0.77 (1) Forward voltage drop V V FM 50 A 0.48 0.52 T = 150 C J 100 A 0.65 0.71 T = 150 C, V = 45 V 600 1000 J R (1) Reverse leakage current I T = 25 C 0.3 1 mA RM J V = Rated V R R T = 125 C 180 320 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 2700 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.50 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.30 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 100BGQ045H Revision: 16-Jun-15 Document Number: 93998 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000