X-On Electronics has gained recognition as a prominent supplier of VS-10CTQ150S-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-10CTQ150S-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-10CTQ150S-M3 Vishay

VS-10CTQ150S-M3 electronic component of Vishay
VS-10CTQ150S-M3 Vishay
VS-10CTQ150S-M3 Schottky Diodes & Rectifiers
VS-10CTQ150S-M3  Semiconductors

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Part No. VS-10CTQ150S-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Datasheet: VS-10CTQ150S-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6137 ea
Line Total: USD 1.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 8000
Multiples : 1000
8000 : USD 1.1005
9000 : USD 1.0965
10000 : USD 1.0922
12000 : USD 1.0878
15000 : USD 1.0835
20000 : USD 1.079
25000 : USD 1.0746
30000 : USD 1.07
50000 : USD 1.0655

0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 1.6585
10 : USD 1.3104
100 : USD 1.0156
500 : USD 0.8741

0
Ship by Tue. 20 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 2.7387
10 : USD 2.673
30 : USD 2.6292
100 : USD 2.5854

0
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 1.6137
10 : USD 1.113
25 : USD 0.873
100 : USD 0.743
250 : USD 0.7418
500 : USD 0.6612
1000 : USD 0.6101
2500 : USD 0.609

0
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 1.7912
3 : USD 1.6148
10 : USD 1.4247
14 : USD 1.1669
37 : USD 1.1127

   
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We are delighted to provide the VS-10CTQ150S-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-10CTQ150S-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES 175 C T operation J Center tap configuration Low forward voltage drop 2 High frequency operation 1 1 High purity, high temperature epoxy 3 2 encapsulation for enhanced mechanical strength and 2 D PAK (TO-263AB) 3 TO-262AA moisture resistance Base Base Guard ring for enhanced ruggedness and long term common common reliability cathode cathode 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 1 3 1 3 please see www.vishay.com/doc 99912 Common Common cathode Anode Anode Anode cathode Anode DESCRIPTION VS-10CTQ150S-M3 VS-10CTQ150-1-M3 This center tap Schottky rectifier has been optimized for low PRIMARY CHARACTERISTICS reverse leakage at high temperature. The proprietary barrier I 2 x 5 A F(AV) technology allows for reliable operation up to 175 C V 150 V junction temperature. Typical applications are in switching R power supplies, converters, freewheeling diodes, and V at I 0.93 V F F reverse battery protection. I 7 mA at 125 C RM T max. 175 C J E 5 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 150 V RRM I t = 5 s sine 620 A FSM p V 5 A , T = 125 C (per leg) 0.73 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-10CTQ150S-M3 PARAMETER SYMBOL UNITS VS-10CTQ150-1-M3 Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 95729 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 5 Maximum average I 50 % duty cycle at T = 155 C, rectangular waveform A F(AV) C forward current, see fig. 5 per device 10 5 s sine or 3 s rect. pulse Following any rated load 620 Maximum peak one cycle non-repetitive I condition and with rated A FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 115 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 10 mH 5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 5 A 0.93 T = 25 C J 10 A 1.10 Maximum forward voltage drop per leg (1) V V FM See fig. 1 5 A 0.73 T = 125 C J 10 A 0.86 T = 25 C 0.05 J Maximum reverse leakage current per (1) I V = Rated V mA RM R R leg See fig. 2 T = 125 C 7 J Threshold voltage V 0.468 V F(TO) T = T maximum J J Forward slope resistance r 28 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, 3.50 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink (only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Case style D PAK (TO-263AB) 10CTQ150S Marking device Case style TO-262AA 10CTQ150-1 Revision: 27-Oct-17 Document Number: 95729 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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