VS-10ETF10S-M3 Vishay

VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C Designed and qualified according to 2 1 JEDEC -JESD 47 Material categorization: for definitions of compliance 3 13 please see www.vishay.com/doc 99912 -- 2 Anode Anode D PAK (TO-263AB) APPLICATIONS Output rectification and freewheeling in inverters, PRIMARY CHARACTERISTICS choppers and converters I 10 A F(AV) Input rectifications where severe restrictions on V 1000 V, 1200 V R conducted EMI should be met V at I 1.33 V F F I 155 A FSM DESCRIPTION t 80 ns rr The VS-10ETF..S-M3 fast soft recovery rectifier series has T max. 150 C J been optimized for combined short reverse recovery time Snap factor 0.6 and low forward voltage drop. 2 Package D PAK (TO-263AB) The glass passivation ensures stable reliable operation in Circuit configuration Single the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 1000, 1200 V RRM I 155 A FSM V 10 A, T = 25 C 1.33 V F J t 1 A, 100 A/s 80 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF10S-M3 1000 1100 4 VS-10ETF12S-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 125 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 130 A Maximum peak one cycle non-repetitive RRM I FSM surge current 10 ms sine pulse, no voltage reapplied 155 10 ms sine pulse, rated V applied 85 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 120 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1200 A s Revision: 04-Jan-18 Document Number: 94885 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.33 V FM J Forward slope resistance r 22.9 m t T = 150 C J Threshold voltage V 0.96 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t 310 ns I rr FM I at 10 A t F pk rr Reverse recovery current I 25 A/s 4.7 A rr t 25 C dir Reverse recovery charge Q 1.05 C rr dt Q rr I RM(REC) Typical snap factor S 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.5 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 10ETF10S 2 Marking device Case style D PAK (TO-263AB) 10ETF12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994 Revision: 04-Jan-18 Document Number: 94885 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000