VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Glass passivated pellet chip junction Base cathode 150 C max operating junction temperature 2 Low forward voltage drop and short reverse recovery time 2 Designed and qualified according to JEDEC -JESD 47 1 3 3 1 Cathode Anode Material categorization: TO-220AC for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Package TO-220AC These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as I 10 A F(AV) well as in input rectification where severe restrictions on V 1000 V, 1200 V R conducted EMI should be met. V at I 1.33 V F F I 140 A FSM DESCRIPTION t 80 ns rr The VS-10ETF1... fast soft recovery rectifier series has been T max. 150 C J optimized for combined short reverse recovery time and low Diode variation Single die forward voltage drop. Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 1000 to 1200 V RRM I Sinusoidal waveform 10 F(AV) A I 140 FSM t 1 A, 100 A/s 80 ns rr V 10 A, T = 25 C 1.33 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK REVERSE V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF10PbF, VS-10ETF10-M3 1000 1100 4 VS-10ETF12PbF, VS-10ETF12-M3 1200 1200 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 125 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 115 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated V applied 66 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 94 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 940 A s Revision: 11-Feb-16 Document Number: 94092 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.33 V FM J Forward slope resistance r 22.9 m t T = 150 C J Threshold voltage V 0.96 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 310 ns rr I at 10 A t F pk rr Reverse recovery current I 25 A/s 4.7 A rr t 25 C dir Reverse recovery charge Q 1.05 C rr dt Q rr Typical snap factor S0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 1.5 thJC junction to case Maximum thermal resistance R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETF10 Marking device Case style TO-220AC (JEDEC) 10ETF12 Revision: 11-Feb-16 Document Number: 94092 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000