VS-10MQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation DO-214AC (SMA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package DO-214AC (SMA) I 1 A DESCRIPTION F(AV) V 100 V The VS-10MQ100-M3 surface mount Schottky rectifier has R been designed for applications requiring low forward drop V at I 0.63 V F F and very small foot prints on PC boards. Typical I 1 mA at 125 C RM applications are in disk drives, switching power supplies, T max. 150 C J converters, freewheeling diodes, battery charging, and reverse battery protection. Diode variation Single die E 1.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1 A F(AV) V 100 V RRM I t = 5 s sine 120 A FSM p V 1.5 A , T = 125 C 0.68 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10MQ100-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 % duty cycle at T = 126 C, rectangular waveform L 2 On PC board 9 mm island 1.5 (0.013 mm thick copper pad area) Maximum average forward current I F(AV) See fig. 4 50 % duty cycle at T = 135 C, rectangular waveform L 2 On PC board 9 mm island 1 A (0.013 mm thick copper pad area) Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 120 non-repetitive surge current, T = 25 C I load condition and with J FSM 10 ms sine or 6 ms rect. pulse 30 See fig. 6 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 8 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 20-Jan-15 Document Number: 93365 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10MQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1 A 0.78 T = 25 C J 1.5 A 0.85 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.63 T = 125 C J 1.5 A 0.68 T = 25 C 0.1 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 1 J Threshold voltage V 0.52 V F(TO) T = T maximum J J Forward slope resistance r 78.4 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 38 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) 1J Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 20-Jan-15 Document Number: 93365 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000