VS-30BQ060HM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak DO-214AB (SMC) of 260 C Meets JESD 201 class 2 whisker test AEC-Q101 qualified PRODUCT SUMMARY Material categorization: for definitions of compliance Package DO-214AB (SMC) please see www.vishay.com/doc 99912 I 3.0 A F(AV) DESCRIPTION V 60 V R The VS-30BQ060HM3 surface mount Schottky rectifier has V at I 0.52 V F F been designed for applications requiring low forward drop I 20 mA at 125 C RM and small foot prints on PC boards. Typical applications are T max. 150 C J in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery protection. E 5.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 60 V RRM I t = 5 s sine 1200 A FSM p V 3.0 A , T = 125 C 0.52 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ060HM3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 123 C, rectangular waveform 3.0 L Maximum average forward current I F(AV) 50 % duty cycle at T = 113 C, rectangular waveform 4.0 L A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 1200 non-repetitive surge current I load condition and with FSM at T = 25 C rated V applied 10 ms sine or 6 ms rect. pulse 130 C RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Dec-14 Document Number: 94844 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30BQ060HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.58 T = 25 C J 6 A 0.76 (1) Maximum forward voltage drop V V FM 3 A 0.52 T = 125 C J 6 A 0.66 T = 25 C 0.5 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 20 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to1 MHz), 25 C 180 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 3.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T J -55 to +150 C Maximum storage temperature range T Stg Maximum thermal resistance, (2) R 12 thJL junction to lead DC operation C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) 3H Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 17-Dec-14 Document Number: 94844 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000