Product Information

VS-121NQ045PBF

VS-121NQ045PBF electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 120 Amp 45 Volt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 46.3111 ea
Line Total: USD 46.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 45.9125
10 : USD 34.175
100 : USD 32.412
500 : USD 31.32

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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VS-121NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 120 A FEATURES 175 C T operation J Lug terminal anode Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Designed and qualified for industrial level Base cathode UL approved file E222165 HALF-PAK (D-67) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 120 A F(AV) The VS-121NQ.. high current Schottky rectifier module V 45 V series has been optimized for low reverse leakage at high R temperature. The proprietary barrier technology allows Package HALF-PAK (D-67) for reliable operation up to 175 C junction temperature. Circuit configuration Single diode Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse batter y protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 120 A F(AV) V 45 V RRM I t = 5 s sine 16 000 A FSM p V 120 A , T = 125 C 0.6 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-121NQ045PbF UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 137 C, rectangular waveform 120 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse 16 000 Maximum peak one cycle Following any rated load non-repetitive surge current I condition and with rated A FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 2000 RRM Non-repetitive avalanche energy E T = 25 C, I = 13 A, L = 1 mH 81 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 13 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Feb-2019 Document Number: 94127 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-121NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 120 A 0.65 T = 25 C J 240 A 0.82 Maximum forward voltage drop (1) V V FM See fig. 1 120 A 0.6 T = 125 C J 240 A 0.76 T = 25 C 10 J Maximum reverse leakage current I V = Rated V mA RM R R See fig. 2 T = 125 C 90 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 5200 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 7.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 500 s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T , T -55 to 175 C J Stg DC operation Maximum thermal resistance, junction to case R 0.38 thJC See fig. 4 C/W Typical thermal resistance, case to heatsink R Mounting surface, smooth and greased 0.05 thCS 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 1000 1000 T = 175 C J 100 T = 150 C J T = 125 C J 100 10 T = 100 C J 1 T = 75 C J 10 T = 175 C 0.1 J T = 125 C J T = 50 C J T = 25 C J 0.01 T = 25 C J 1 0.001 0 0.3 0.6 0.9 1.2 1.5 1.8 05 10 15 20 25 30 35 40 45 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94127 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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