X-On Electronics has gained recognition as a prominent supplier of VS-18TQ045STRL-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-18TQ045STRL-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-18TQ045STRL-M3 Vishay

VS-18TQ045STRL-M3 electronic component of Vishay
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Part No.VS-18TQ045STRL-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Datasheet: VS-18TQ045STRL-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.8073 ea
Line Total: USD 6458.4 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 8000
Multiples : 1
8000 : USD 1.017
9000 : USD 1.0068
10000 : USD 0.9967
12000 : USD 0.9867
15000 : USD 0.9769
20000 : USD 0.9671
25000 : USD 0.9574
30000 : USD 0.9478
50000 : USD 0.9383
100000 : USD 0.929

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.8073

   
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We are delighted to provide the VS-18TQ045STRL-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-18TQ045STRL-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 18 A FEATURES Base cathode 175 C T operation J 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical strength 1 and moisture resistance 1 3 Guard ring for enhanced ruggedness and long 3 N/C Anode term reliability 2 D PAK (TO-263AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 18 A Material categorization: for definitions of compliance F(AV) please see www.vishay.com/doc?99912 V 35 V, 40 V, 45 V R V at I 0.53 V F F DESCRIPTION I 25 mA at 125 C RM The VS-18TQ... Schottky rectifier series has been optimized T max. 175 C J for low reverse leakage at high temperature. The proprietary E 24 mJ AS barrier technology allows for reliable operation up to 175 C 2 Package D PAK (TO-263AB) junction temperature. Typical applications are in switching Circuit configuration Single power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 18 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1800 A FSM p V 18 A , T = 125 C 0.53 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-18TQ035S-M3 VS-18TQ040S-M3 VS-18TQ045S-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 149 C, rectangular waveform 18 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse Following any rated 1800 Maximum peak one cycle load condition and non-repetitive surge current I A FSM with rated V 10 ms sine or 6 ms rect. pulse RRM 390 See fig. 7 applied Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 27-Oct-17 Document Number: 94928 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 18 A 0.60 T = 25 C J 36 A 0.72 Maximum forward voltage drop (1) V V FM See fig. 1 18 A 0.53 T = 125 C J 36 A 0.67 T = 25 C 2.5 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 25 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and T , T -55 to 175 C J Stg storage temperature range Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 (10) (lbf in) 18TQ035S 2 Marking device Case style D PAK (TO-263AB) 18TQ040S 18TQ045S 1000 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J 1 T = 100 C T = 175 C J J T = 125 C J 0.1 T = 25 C T = 75 C J J 0.01 T = 50 C J 0.001 T = 25 C J 0.1 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 45 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 94928 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 100 10 1 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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