VS-30CTQ050-M3, VS-30CTQ060-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 2 x 15 A Material categorization: for definitions of compliance F(AV) please see www.vishay.com/doc 99912 V 50 V, 60 V R V at I 0.56 V F F DESCRIPTION I max. 45 mA at 125 C RM This center tap Schottky rectifier has been optimized for T max. 150 C J very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation E 13 mJ AS up to 150 C junction temperature. Typical applications are Package 3L TO-220AB in switching power supplies, converters, freewheeling Circuit configuration Common cathode diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 30 A F(AV) V 50/60 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C (per leg) 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30CTQ050-M3 VS-30CTQ060-M3 UNITS Maximum DC reverse voltage V R 50 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per device 30 Maximum average forward I 50 % duty cycle at T = 105 C, rectangular waveform F(AV) C current, see fig. 5 per leg 15 A 5 s sine or 3 s rect. pulse Following any rated load 1000 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse V applied 260 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.50 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Aug-17 Document Number: 96276 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30CTQ050-M3, VS-30CTQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.62 T = 25 C J 30 A 0.82 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.71 T = 25 C 0.80 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Threshold voltage V 0.39 V F(TO) T = T maximum J J Forward slope resistance r 8.47 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 720 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, 3.25 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 30CTQ050 Marking device Case style 3L TO-220AB 30CTQ060 Revision: 17-Aug-17 Document Number: 96276 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000