VS-30EPH06-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Common Hyperfast recovery time cathode 2, Base Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Single diode device Available 33 Designed and qualified according to JEDEC -JESD 47 TO-247AC 2L 13 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with PRIMARY CHARACTERISTICS optimized performance of forward voltage drop, hyperfast I 30 A F(AV) recovery time and soft recovery. V 600 V R The planar structure and the platinum doped life tim e control guarantee the best overall performance, ruggedness V at I 1.34 V F F and reliability characteristics. t typ. See Recovery table rr These devices are intended for use in PFC boost stage in th e T max. 175 C J AC/DC section of SMPS, inverters or as freewheeling diodes. Package TO-247AC 2L Their extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 116 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 10 ms 300 FSM J p Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.6 F Forward voltage V F I = 30 A, T = 150 C - 1.34 1.75 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 60 500 J R R Junction capacitance C V = 600 V - 33 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 28-Nov-2019 Document Number: 94018 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30EPH06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 28 35 F F R Reverse recovery time t T = 25 C -31 - ns rr J T = 125 C - 77 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 200 V R T = 25 C - 65 - J Reverse recovery charge Q nC rr T = 125 C - 345 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.50.9 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.4 - thCS case to heatsink and greased -6.0 - g Weight -0.22 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 2L 30EPH06 1000 1000 100 T = 175 C J T = 150 C J 10 T = 125 C 100 J T = 100 C 1 J T = 175 C J 0.1 T = 150 C J T = 25 C J 10 T = 25 C J 0.01 0.001 1 0.0001 0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 3.5 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Nov-2019 Document Number: 94018 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R