Product Information

VS-30ETH06PBF

VS-30ETH06PBF electronic component of Vishay

Datasheet
Rectifiers RECOMMENDED ALT 78-VS-30ETH06-M3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 1.8962
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 6.785
10 : USD 2.2759
100 : USD 1.9339
250 : USD 1.8592
500 : USD 1.7203
1000 : USD 1.4852
2000 : USD 1.4745
5000 : USD 1.4531
10000 : USD 1.4104
N/A

Obsolete
0 - WHS 3

MOQ : 5
Multiples : 5
5 : USD 2.3679
10 : USD 2.2277
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
LoadingGif

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VS-30ETH06PbF, VS-30ETH06-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base Reduced Q and soft recovery rr cathode 175 C T maximum J 2 For PFC CRM/CCM operation 2 Low forward voltage drop 3 Low leakage current 1 Designed and qualified according to TO-220AC 1 3 JEDEC -JESD 47 Cathode Anode Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS State of the art hyperfast recovery rectifiers designed with I 30 A F(AV) optimized performance of forward voltage drop, hyperfast V 600 V R recovery time and soft recovery. V at I 1.34 V F F The planar structure and the platinum doped life time t (typ.) 23 ns rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. Package TO-220AC These devices are intended for use in PFC boost stage in the Circuit configuration Single AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 103 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.6 F Forward voltage V F I = 30 A, T = 150 C - 1.34 1.75 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 60 500 J R R Junction capacitance C V = 600 V - 33 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 27-Oct-17 Document Number: 94019 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30ETH06PbF, VS-30ETH06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 28 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - 23 30 F F R Reverse recovery time t ns rr T = 25 C -31 - J T = 125 C - 77 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 200 V R T = 25 C - 65 - J Reverse recovery charge Q nC rr T = 125 C - 345 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R -0.71.1 thJC junction-to-case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction-to-ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.2 - thCS case-to-heatsink -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AC 30ETH06 1000 1000 100 T = 175 C J T = 150 C J 10 T = 125 C 100 J T = 100 C 1 J T = 175 C J 0.1 T = 150 C J T = 25 C J 10 T = 25 C J 0.01 0.001 1 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 94019 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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