VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt FEATURES Base common Ultrafast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Designed and qualified according to commercial qualification 1 AEC-Q101 qualified, meets JESD 201 class 1A whisker 2 test 3 13 Material categorization: for definitions of compliance TO-247AD 3L Anode Anode 2 1 2 please see www.vishay.com/doc 99912 Common cathode DESCRIPTIONS / APPLICATIONS VS-CPU60... series are the state of the art ultrafast recovery PRIMARY CHARACTERISTICS rectifiers designed with optimized performance of forward I 2 x 30 A F(AV) voltage drop and ultrafast recovery time. V 600 V R The planar structure and the platinum doped life time control V at I 1.75 V guarantee the best overall performance, ruggedness and F F reliability characteristics. t typ. 26 ns rr These devices are intended for use in the output rectification T max. 175 C J stage of SMPS, UPS, DC/DC converters as well as Package TO-247AD 3L freewheeling diodes in low voltage inverters and chopper Circuit configuration Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current per leg I T = 131 C 30 F(AV) C A T = 25 C, t = 8.3 ms half sine C p Non-repetitive peak surge current per leg I 250 FSM wave connecting two anode pins Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.4 1.75 F Forward voltage V F I = 30 A, T = 150 C - 1.1 1.4 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 200 J R R Junction capacitance C V = 600 V - 20 - pF T R Revision: 12-Nov-2018 Document Number: 95951 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 26 - F F R Reverse recovery time t T = 25 C -42 - ns rr J T = 125 C - 100 - J I = 30 A F T = 25 C - 5 - J Peak recovery current I dI /dt = -200 A/s A RRM F T = 125 C - 10 - J V = 200 V R T = 25 C - 125 - J Reverse recovery charge Q nC rr T = 125 C - 580 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, R -0.71 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heat sink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AD 3L CPU6006LH Revision: 12-Nov-2018 Document Number: 95951 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000