VS-ETH0806FP-M3 Vishay

333 3 VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast soft recovery time Low forward voltage drop 175 C operating junction temperature 1 2 Low leakage current 1 Cathode Anode Fully isolated package (V = 2500 V ) INS RMS 2 True 2 pin package TO-220 FullPAK 2L Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 8 A F(AV) guarantee the best overall performance, ruggedness and V 600 V R reliability characteristics. V at I 1.3 V F F These devices are intended for use in PFC boost stage in th e t (typ.) 16 ns rr AC/DC section of SMPS, inverters or as freewheeling T max. 175 C J diodes. Package TO-220 FullPAK 2L The extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce over dissipation in the switching element and snubbers. MECHANICAL DATA Case: TO-220 FullPAK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current in DC I T = 114 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 80 FSM J A Repetitive peak surge current I T = 96 C 16 FRM C Square wave 20 kHz duty cycle (50 %) Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 8 A - 2.0 2.65 V F Forward voltage V F I = 8 A, T = 150 C - 1.3 1.85 F J V = V rated - 0.02 12 R R Reverse leakage current I A R T = 150 C, V = V rated - 15 100 J R R Junction capacitance C V = 600 V - 6 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 17-Feb-2021 Document Number: 93515 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 16 23 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 20 28 F F R Reverse recovery time t ns rr T = 25 C -21 - J T = 125 C - 39 - J I = 8 A, F T = 25 C - 3 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 5 - J V = 390 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 108 - J Reverse recovery time t -30 - ns rr I = 8 A, F Peak recovery current I T = 125 C dI /dt = 600 A/s, -13 - A RRM J F V = 390 V R Reverse recovery charge Q - 205 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -4.65.5 thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction-to-ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case-to-heatsink -2 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Marking device Case style TO-220 FullPAK 2L ETH0806FP Revision: 17-Feb-2021 Document Number: 93515 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000