Ordering number : EN1895C DCB010 SANYO Semiconductors DATA SHEET Silicon Epitaxial Planar Type (Cathode Common) DCB010 Very High-Speed Switching Diode Features Ideally suited for use in hybrid ICs because of very small-sized package. Fast switching speed. Small interterminal capacitance. Specifications Absolute Maximum Ratings at Tc=25C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage V 85 V RM Reverse Voltage V 80 V R I 300 mA FM Peak Forward Current I * 450 mA FM I 100 mA O Average Rectified Current I * 150 mA O I 4A FSM Surge Current (1 s) I * 6A FSM Allowable Power Dissipation P 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C * : Total value Electrical Characteristics at Tc=25C Ratings Parameter Symbol Conditions Unit min typ max V I =1mA 0.60 V F1 F Forward Voltage V I =10mA 0.72 V F2 F V I =100mA 1.20 V F3 F I V =30V 0.1 A R1 R Reverse Current I V =80V 0.5 A R2 R Marking: W6 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. www.semiconductor-sanyo.com/network 41509DH MS IM TC-00001938 / N0106 / 12000 GI IM / 2279TA, TS No.1895-1/3DCB010 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Interterminal Capacitance C V =0V, f=1MHz 3.0 pF R Reverse Recovery Time t I =10mA, V =6V, R =50 , I =0.1Irp 4.0 ns rr F R L rr Package Dimensions Electrical Connection unit : mm (typ) 7013A-006 3 1 : Anode 2.9 0.1 2 : Anode 3 3 : Cathode Top view 1 2 12 0.95 0.4 1 : Anode 2 : Anode 3 : Cathode SANYO : CP Reverse Recovery Time Test Circuit 0.01F DUT 0.1Irp I =10mA F 0 2k 50 50 Irp --6V 50ns t rr I -- V I -- V F F R R 3 10 10 5 5 2 2 2 10 1.0 5 5 2 10 2 5 --1 10 2 5 1.0 5 2 --2 2 10 --1 10 5 5 2 2 --2 --3 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 204060 80 100 Forward Voltage, V -- V IT02037 Reverse Voltage, V -- V IT02038 F R No.1895-2/3 Ta=100C 50C 75C 25C Ta=100C 25C --25C Forward Current, I -- mA F 1.1 2.5 0.05 0.3 0.5 1.5 0.5 Reverse Current, I -- A R