VS-HFA04SD60STR-M3

VS-HFA04SD60S-M3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 4 A FEATURES 2, 4 Ultrafast recovery time Ultrasoft recovery Very low I RRM Very low Q rr 1 3 Guaranteed avalanche N/C Anode DPAK (TO-252AA) Specified at operating temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS BENEFITS I 4 A F(AV) Reduced RFI and EMI V 600 V R Reduced power loss in diode and switching transistor V at I 1.4 V F F Higher frequency operation t typ. 17 ns rr T max. 150 C Reduced snubbing J Package DPAK (TO-252AA) Reduced parts count Circuit configuration Single DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V RRM Maximum continuous forward current I T = 100 C 4 F(AV) C Single pulse forward current I 25 A FSM Repetitive peak forward current I T = 116 C 16 FRM C Maximum power dissipation P T = 100 C 10 W D C Operating junction and storage temperatures T , T -55 to +150 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 4 A - 1.5 1.8 V F Forward voltage V I = 8 A - 1.8 2.2 F F See fig. 1 I = 4 A, T = 125 C - 1.4 1.7 F J V = V rated - 0.17 3.0 Maximum reverse R R I A R leakage current T = 125 C, V = 0.8 x V rated - 44 300 J R R Junction capacitance C V = 200 V - 4 8 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 12-Apr-18 Document Number: 93473 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA04SD60S-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/A, V = 30 V - 17 - F F R Reverse recovery time t T = 25 C -28 42 ns rr J T = 125 C - 38 57 J T = 25 C - 2.9 5.2 J Peak recovery current I A RRM I = 4 A F T = 125 C - 3.7 6.7 J dI /dt = 200 A/s F T = 25 C - 40 60 J V = 200 V R Reverse recovery charge Q nC rr T = 125 C - 70 105 J T = 25 C - 280 - J Rate of fall of recovery current dI /dt A/s (rec)M T = 125 C - 235 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 150 C J Stg storage temperature range Thermal resistance, R --5.0 thJC junction to case C/W Thermal resistance, R Typical socket mount - - 80 thJA junction to ambient -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style DPAK (TO-252AA) HFA04SD60S Revision: 12-Apr-18 Document Number: 93473 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000