VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt FEATURES Common Ultrafast recovery time cathode 2, Base Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: for definitions of compliance 13 TO-247AC 3L Anode Anode please see www.vishay.com/doc 99912 1 2 DESCRIPTION / APPLICATIONS VS-MUR3020WT... is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of PRIMARY CHARACTERISTICS forward voltage drop and ultrafast recovery time. I 2 x 15 A F(AV) The planar structure and the platinum doped life time control, guarantee the best overall performance, V 200 V R ruggedness and reliability characteristics. V at I 0.85 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well as T max. 175 C freewheeling diode in low voltage inverters and chopper J motor drives. Package TO-247AC 3L Their extremely optimized stored charge and low recovery Circuit configuration Common cathode current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per leg 15 Average rectified forward current I F(AV) total device Rated V , T = 150 C 30 R C A Non-repetitive peak surge current per leg I t = 10 ms 200 FSM p Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 150 C 30 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 15 A - - 1.05 F Forward voltage V F I = 15 A, T = 150 C - - 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 55 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 12 - nH S Revision: 09-Oct-2018 Document Number: 94080 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, di /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -22- ns rr J T = 125 C - 39 - J I = 15 A F T = 25 C - 1.6 - J Peak recovery current I di /dt = 200 A/s A RRM F T = 125 C - 4.1 - J V = 160 V R T = 25 C - 19 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R --1.5 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 3L MUR3020WT Revision: 09-Oct-2018 Document Number: 94080 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000