VS-STPS20L15D-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES Base 125 C T operation (V < 5 V) J R cathode Optimized for OR-ing applications 2 Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 1 3 Cathode Anode High purity, high temperature epoxy encapsulation for 2L TO-220AC enhanced mechanical strength and moisture resistance Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 20 A F(AV) V 15 V DESCRIPTION R The Schottky rectifier module has been optimized for ultra V at I See Electrical table F F low forward voltage drop specifically for the OR-ing of I max. 600 mA at 100 C RM parallel power supplies. The proprietary barrier technology T max. 125 C J allows for reliable operation up to 125 C junction E 10 mJ temperature. Typical applications are in parallel switching AS power supplies, converters, reverse battery protection, and Package 2L TO-220AC redundant power subsystems. Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 20 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 125 C (typical) 0.25 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-STPS20L15D-M3 UNITS Maximum DC reverse voltage V R 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle, T = 85 C, rectangular waveform 20 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 700 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse V applied 330 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96269 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-STPS20L15D-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 19 A -0.41 T = 25 C J 40 A - 0.52 Forward voltage drop (1) V V FM See fig. 1 19 A 0.25 0.33 T = 125 C J 40 A 0.37 0.50 T = 25 C -10 Reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 100 C - 600 J Threshold voltage V 0.182 V F(TO) T = T maximum J J Forward slope resistance r 7.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 - nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation R 1.5 thJC junction to case See fig. 4 Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (for TO-220) Maximum thermal resistance, DC operation R 40 thJA 2 (for D PAK) junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style 2L TO-220AC STPS20L15D Revision: 23-Nov-17 Document Number: 96269 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000