Product Information

BT139-600,127

BT139-600,127 electronic component of WeEn Semiconductor

Datasheet
Triacs RAIL TRIAC
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

18: USD 0.4227 ea
Line Total: USD 7.61

0 - Global Stock
MOQ: 18  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 18
Multiples : 1

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BT139-600,127
WeEn Semiconductor

18 : USD 0.4227
100 : USD 0.4054
500 : USD 0.3911
1000 : USD 0.3775
2000 : USD 0.3746
5000 : USD 0.3671

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 16
Multiples : 1

Stock Image

BT139-600,127
WeEn Semiconductor

16 : USD 0.8642

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Additional Infomation About Product

BT139-600 4Q Triac 26 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. 2. Features and benefits High blocking voltage capability Planar passivated for voltage ruggedness and reliability Less sensitive gate for high noise immunity Triggering in all four quadrants 3. Applications General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 99 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 155 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 170 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 5 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 8 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 10 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ - 22 70 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 6 45 mA H D jWeEn Semiconductors BT139-600 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.2 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 200 250 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dV /dt rate of change of V = 400 V T = 95 C dI /dt = 7.2 A/ 10 20 - V/s com D j com commutating voltage ms I = 16 A gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT139-600 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT139-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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