BT151-650R,127 WeEn Semiconductor

BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 Rev. 05 27 February 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability High thermal cycling performance High surge current capability 1.3 Applications Ignition circuits Protection Circuits Motor control Static switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 650 V DRM off-state voltage I average on-state half sine wave --7.5 A T(AV) current T 109 C see Figure 3 mb I RMS on-state half sine wave --12 A T(RMS) current T 109 C see Figure 1 mb see Figure 2 Static characteristics I gate trigger current V =12V T =25C -2 15 mA GT D j I =100 mA see Figure 8 TNXP Semiconductors BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb AK 2 A anode G 3G gate sym037 mb mb anode 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-650R TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB BT151-650R 5 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 27 February 2009 2 of 11