X-On Electronics has gained recognition as a prominent supplier of BT151X-800R/DG,127 SCRs across the USA, India, Europe, Australia, and various other global locations. BT151X-800R/DG,127 SCRs are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

BT151X-800R/DG,127 WeEn Semiconductor

BT151X-800R/DG,127 electronic component of WeEn Semiconductor
BT151X-800R/DG,127 WeEn Semiconductor
BT151X-800R/DG,127 SCRs
BT151X-800R/DG,127  Semiconductors

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See Product Specifications
Part No. BT151X-800R/DG,127
Manufacturer: WeEn Semiconductor
Category: SCRs
Description: SCRs THYRISTOR
Datasheet: BT151X-800R/DG,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8975 ea
Line Total: USD 0.9 
Availability - 6690
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6690
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.7363
25 : USD 0.4212
100 : USD 0.3476
500 : USD 0.2992
1000 : USD 0.2871

117
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.19
10 : USD 0.875
25 : USD 0.6482
40 : USD 0.4718
100 : USD 0.4312

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Maximum Operating Temperature
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BT151X-800R/DG,127 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT151X-800R/DG,127 and other electronic components in the SCRs category and beyond.

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BT151X-800R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F)full pac plastic package intended for use in applications requiring high bidirectional blocking voltage and high current surge capability with high thermal cycling performance. 2. Features and benefits High bidirectional blocking voltage capability High current surge capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average on-state half sine wave T 69 C - - 7.5 A T(AV) h current I RMS on-state current half sine wave T 69 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 120 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 132 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151X-800R SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 536 V T = 125 C R = 100 200 1000 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform gate open circuit Fig. 12 V = 536 V T = 125 C (V = 50 130 - V/s DM j DM 67% of V ) exponential waveform DRM Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151X-800R TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT151X-800R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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WeEn Semiconductors
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