BTA208X-800CTQ WeEn Semiconductor

BTA208X-800CT 3Q Hi-Com Triac Rev.01- 07 November 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO220Ffull pac plastic package. This triac is intended for use in motor control circuits where very high blocking voltage can occur. Rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications where j(max)high junction operating temperature capabilit is required. 2. Features and benefits High junction operating temperature capability (T = 150 C) j(max) Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Triggering in three quadrants only Very high immunity to IEC 61000-4-4 fast transient Package meets UL94V0 flammability requirement Package is RoHS compliant Package meets UL1557 isolation test requirement rated at 2500V RMS 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls e.g. vertical axis washing machines Applications subject to high temperature (T = 150 C) j(max) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I RMS on-state current full sine wave T 103C - - 8 A T(RMS) h Fig.1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t =20ms - - 80 A TSM j(init) p state current Fig. 4 Fig. 5 full sine wave T = 25 C t =16.7ms - - 88 A j(init) p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 35 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208X-800CT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 40 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - 1.25 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 200 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit V = 536 V T = 150 C (V = 67% 100 - - V/s DM j DM of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 8 A 1 - - A/ms com DM j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb n.c. mounting base isolated 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA208X-800CT TO220F BTA208X-800CTQ Tube 50 SOT186A 14-Nov-2013 7. Marking Table 4. Marking codes Type number Marking codes BTA208X-800CT BTA208X-800CT BTA208X-800CT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 07 November 2019 2 / 12