BTA212X-800E,127 WeEn Semiconductor

DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series D, E and F Three quadrant triacs guaranteed commutation September 2018 Product specificationWeEn Semiconductors Product specification Three quadrant triacs BTA216X series D, E and F guaranteed commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutation triacs SYMBOL PARAMETER MAX. UNIT in a full pack, plastic envelope intended for use in motor control circuits or with other BTA216X- 600D highly inductive loads. These devices BTA216X- 600E balance the requirements of commutation BTA216X- 600F performance and gate sensitivity. The V Repetitive peak off-state voltages 600 V DRMsensitive gat E series andlogic leve D RMS on-state current series are intended for interfacing with low I Non-repetitive peak on-state 16 A T(RMS) power drivers, including micro controllers. I current 140 A TSM PINNING - SOT186A PIN CONFIGURATION SYMBOL mb PIN DESCRIPTION 1 main terminal 1 T2 T1 G 2 main terminal 2 sym051 3 gate 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 1 V Repetitive peak off-state - 600 V DRM voltages I RMS on-state current full sine wave - 16 A T(RMS) T 38 C hs I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 2018 1 Rev 2.100