BUJ105AD,118 WeEn Semiconductor

BUJ105AD Silicon diffused power transistor Rev. 4 1 3 July 201 8 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Motor control systems 1.4 Quick reference data V 700 V I 8 A CESM C P 80 W h = 11 (typ) tot FEsat 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol mb 1base 1 2 collector 2 3emitter 1 mb mounting base connected to collector 3 sym056 DPAK (SOT428) 1 It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.WeEn Semiconductors BUJ105AD Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ105AD D-PAK plastic single-ended surface mounted package 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V peak collector-emitter voltage V = 0 V - 700 V CESM BE V collector-emitter voltage open base - 400 V CEO V collector-base voltage open emitter - 700 V CBO I collector current (DC) - 8 A C I peak collector current - 16 A CM I base current (DC) - 4 A B I peak base current - 8 A BM P total power dissipation T = 25 C see Figure 1 -80 W tot mb T storage temperature 65 +150 C stg T junction temperature - 150 C j 001aab993 120 P der (%) 80 40 0 0 40 80 120 160 T (C) mb P tot P % = ------------------------- 100% der P tot25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature WeEn Semiconductors Co., Ltd. 201 8. All rights reserved BUJ105AD All information provided in this document is subject to legal disclaimers. Product data sheet Rev.4 13 July 2018 2 / 10