BUJ103A,127 WeEn Semiconductor

BUJ103A Silicon diffused power transistor Rev.05 - 29 March 2018 Product data sheet 1. General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Low thermal resistance Fast switching 3. Applications Inverters Motor control systems Electronic lighting ballasts DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V peak collector-emitter V = 0 V 700 V CESM BE voltage I 4 A C collector current (DC) P total power dissipation T 25 C Fig. 1 80 W tot mb Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 1 A V = 5 V T = 25 C 10 17 32 FE C CE mb Fig. 9 I = 500 mA V = 5 V T = 25 C 13 22 32 C CE mbWeEn Semiconductors BUJ103A Silicon diffused power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base 2 C collector 2 3 E emitter 1 mb C mounting base connected to collector 3 sym056 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ103A TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking codes BUJ103A BUJ103A BUJ103A All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 March 2018 2 / 14