BUJ103AD,118 WeEn Semiconductor

BUJ103AD Silicon diffused power transistor Rev. 2 8 November 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control systems 1.4 Quick reference data V 700 V I 4 A CESM C P 80 W h = 12.5 (typ) tot FEsat 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 base mb 2 1 2 collector 3emitter 1 mb mounting base connected to collector 3 2 sym056 1 3 SOT428 (D-PAK) 1 It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. DPAKBUJ103AD NXP Semiconductors Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ103AD D-PAK plastic single-ended surface mounted package 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V peak collector-emitter voltage V = 0 V - 700 V CESM BE V collector-base voltage open emitter - 700 V CBO V collector-emitter voltage open base - 400 V CEO I collector current (DC) - 4 A C I peak collector current - 8 A CM I base current (DC) - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 1 -80 W tot mb T storage temperature 65 +150 C stg T junction temperature - 150 C j 001aab993 120 P der (%) 80 40 0 0 40 80 120 160 T (C) mb P tot P % = ------------------------- 100% der P tot25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ103AD All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 8 November 2011 2 of 13